CY7C1021DV33-10ZSXA

CY7C1021DV33
Document #: 38-05460 Rev. *G Page 4 of 13
AC Test Loads and Waveforms
[4]
90%
10%
3.0 V
GND
90%
10%
ALL INPUT PULSES
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
Rise Time: 1 V/ns
Fall Time: 1 V/ns
30 pF*
OUTPUT
Z = 50
50
1.5 V
(b)
(a)
3.3 V
OUTPUT
5 pF
(c)
R 317
R2
351
High-Z characteristics:
CY7C1021DV33
Document #: 38-05460 Rev. *G Page 5 of 13
Switching Characteristics
Over the Operating Range
[5]
Parameter Description
-10 (Ind’l/Auto-A)
UnitMin. Max.
Read Cycle
t
power
[6]
V
CC
(typical) to the first access 100 s
t
RC
Read cycle time 10 ns
t
AA
Address to data valid 10 ns
t
OHA
Data hold from address change 3 ns
t
ACE
CE LOW to data valid 10 ns
t
DOE
OE LOW to data valid 5 ns
t
LZOE
OE LOW to low-Z
[8]
0ns
t
HZOE
OE HIGH to high-Z
[7, 8]
5ns
t
LZCE
CE LOW to low-Z
[8]
3ns
t
HZCE
CE HIGH to high-Z
[7, 8]
5ns
t
PU
[9]
CE LOW to power-up 0 ns
t
PD
[9]
CE HIGH to power-down 10 ns
t
DBE
Byte Enable to data valid 5 ns
t
LZBE
Byte Enable to low-Z 0 ns
t
HZBE
Byte Disable to high-Z 6 ns
Write Cycle
[10]
t
WC
Write cycle time 10 ns
t
SCE
CE LOW to write end 8 ns
t
AW
Address set-up to write end 8 ns
t
HA
Address hold from write end 0 ns
t
SA
Address set-up to write start 0 ns
t
PWE
WE pulse width 7 ns
t
SD
Data set-up to write end 5 ns
t
HD
Data hold from write end 0 ns
t
LZWE
WE HIGH to low-Z
[8]
3ns
t
HZWE
WE LOW to high-Z
[7, 8]
5ns
t
BW
Byte enable to end of write 7 ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V.
6. t
POWER
gives the minimum amount of time that the power supply should be at typical V
CC
values until the first memory access can be performed.
7. t
HZOE
, t
HZBE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in (c) of AC Test Loads. Transition is measured when the outputs enter a high impedance state.
8. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
9. This parameter is guaranteed by design and is not tested.
10.The internal Write time of the memory is defined by the overlap of CE
LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a Write
and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that
terminates the Write.
CY7C1021DV33
Document #: 38-05460 Rev. *G Page 6 of 13
Data Retention Characteristics Over the Operating Range
Parameter Description Conditions Min. Max. Unit
V
DR
V
CC
for data retention 2 V
I
CCDR
Data retention current V
CC
= V
DR
= 2.0 V, CE > V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V or V
IN
< 0.3 V
Industrial
3mA
t
CDR
[3]
Chip deselect to data retention time 0 ns
t
R
[11]
Operation recovery time t
RC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
[12, 13]
Read Cycle No. 2 (OE Controlled)
[13, 14]
3.0 V3.0 V
t
CDR
V
DR
> 2 V
DATA RETENTION MODE
t
R
CE
V
CC

CY7C1021DV33-10ZSXA

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union