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STTH802G

P1-P3P4-P6P7-P9P10-P11
September 2006 Rev 2 1/11
STTH802
Ultrafast recovery diode
Main product characteristics
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery time
■ High junction temperature
Description
The STTH802 uses ST's new 200 V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, DPAK,
and D
2
PAK this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
Order codes
I
F(AV)
8 A
V
RRM
200 V
T
j (max)
175° C
V
F
(typ) 0.8 V
t
rr
(typ) 17 ns
Part Number Marking
STTH802D STTH802
STTH802FP STTH802
STTH802B STTH802
STTH802B-TR STTH802
STTH802G STTH802
STTH802G-TR STTH802
TO-220AC
STTH802D
DPAK
STTH802B
TO-220FPAC
STTH802FP
A
A
A
K
K
K
K
A
A
K
K
NC
NC
DPAK
STTH802G
2
www.st.com
Characteristics STTH802
2/11
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.73 x I
F(AV)
+ 0.021 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 16 A
I
F(AV)
Average
forward
current, δ = 0.5
TO-220A, DPAK, D
2
PA K
T
c
= 145° C
8A
TO-220FPAC
T
c
= 125° C
I
FSM
Surge non
repetitive
forward current
t
p
= 10 ms Sinusoidal 100 A
T
stg
Storage temperature range -65 to + 175 ° C
T
j
Maximum operating junction temperature 175 ° C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC, DPAK, D
2
PA K 3. 2
° C/W
TO-220FPAC 5.5
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
6
µA
T
j
= 125° C 6 60
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 8 A
0.95 1.05
V
T
j
= 150° C 0.8 0.90
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH802 Characteristics
3/11
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
25 30 ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
17 22
I
RM
Reverse recovery current
I
F
= 8 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125 °C
5.5 7 A
t
fr
Forward recovery time
I
F
= 8 A, dI
F
/dt = 50 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
150 ns
V
FP
Forward recovery voltage
I
F
= 8 A, dI
F
/dt = 50 A/µs,
T
j
= 25 °C
1.5 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
0
20
40
60
80
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 2 WP = 2 W
P = 1 WP = 1 W
P = 5 WP = 5 W
δ
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
DPAK, D
2
PAK)
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z
th(j-c)
/R
th(j-c)
Single pulse
TO-220AC
DPAK
DPAK
2
tp(s)
P1-P3P4-P6P7-P9P10-P11

STTH802G

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
Rectifiers Recovery Diode Ultra Fast
Lifecycle:
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