MC74VHC245
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS
Unit
T
A
= − 40 to 85°CT
A
= 25°C
V
CC
V
Test ConditionsParameterSymbol Unit
MaxMinMaxTypMin
V
CC
V
Test ConditionsParameterSymbol
I
OZ
Maximum
Three−State Leakage
Current
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
5.5 ± 0.25 ± 2.5 μA
I
CC
Maximum Quiescent
Supply Current
V
in
= V
CC
or GND 5.5 4.0 40.0 μA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0ns)
Symbol Parameter Test Conditions
T
A
= 25°C T
A
= − 40 to 85°C
Unit
Min Typ Max Min Max
t
PLH
,
t
PHL
Maximum Propagation Delay,
A to B or B to A
V
CC
= 3.3 ± 0.3V C
L
= 15pF
C
L
= 50pF
5.8
8.3
8.4
11.9
1.0
1.0
10.0
13.5
ns
V
CC
= 5.0 ± 0.5V C
L
= 15pF
C
L
= 50pF
4.0
5.5
5.5
7.5
1.0
1.0
6.5
8.5
t
PZL
,
t
PZH
Output Enable Time
OE
to A or B
V
CC
= 3.3 ± 0.3V C
L
= 15pF
R
L
= 1 kΩ C
L
= 50pF
8.5
11.0
13.2
16.7
1.0
1.0
15.5
19.0
ns
V
CC
= 5.0 ± 0.5V C
L
= 15pF
R
L
= 1 kΩ C
L
= 50pF
5.8
7.3
8.5
10.6
1.0
1.0
10.0
12.0
t
PLZ
,
t
PHZ
Output Disable Time
OE
to A or B
V
CC
= 3.3 ± 0.3V C
L
= 50pF
R
L
= 1 kΩ
11.5 15.8 1.0 18.0
ns
V
CC
= 5.0 ± 0.5V C
L
= 50pF
R
L
= 1 kΩ
7.0 9.7 1.0 11.0
t
OSLH
,
t
OSHL
Output to Output Skew
V
CC
= 3.3 ± 0.3V C
L
= 50pF
(Note 1)
1.5 1.5 ns
V
CC
= 5.0 ± 0.5V C
L
= 50pF
(Note 1)
1.0 1.0 ns
C
in
Maximum Input Capacitance
DIR, OE
4 10 10 pF
C
I/O
Maximum Three−State
I/O Capacitance
8 pF
C
PD
Power Dissipation Capacitance (Note 2)
Typical @ 25°C, V
CC
= 5.0V
pF
21
1. Parameter guaranteed by design. t
OSLH
= |t
PLHm
− t
PLHn
|, t
OSHL
= |t
PHLm
− t
PHLn
|.
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/ 8 (per bit). C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 5.0V)
Symbol
Parameter
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.9 1.2 V
V
OLV
Quiet Output Minimum Dynamic V
OL
−0.9 −1.2 V
V
IHD
Minimum High Level Dynamic Input Voltage 3.5 V
V
ILD
Maximum Low Level Dynamic Input Voltage 1.5 V
