SI7738DP-T1-GE3 Datasheet SI7738DP-T1-E3, SI7738DP-T1-GE3 | P1-P3

Vishay Siliconix

Si7738DP

New Product

Document Number: 69982

S09-0536-Rev. C, 06-Apr-09

www.vishay.com

1

N-Channel 150-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100 % UIS Tested

APPLICATIONS

• Primary Side Switch

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a

Q

g

(Typ.)

150

0.038 at V

GS

= 10 V

30 35 nC

Ordering Information: Si7738DP-T1-E3 (Lead (Pb)-free)

Si7738DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK

®

SO-8

Bottom View

N

-

C

hannel M

OS

FET

G

D

S

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (

www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 65 °C/W.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

150

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

30

a

A

T

C

= 70 °C

26

T

A

= 25 °C

7.7

b, c

T

A

= 70 °C

6.2

b, c

Pulsed Drain Current I

DM

60

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

30

a

T

A

= 25 °C

4.5

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

30

Single Pulse Avalanche Energy

E

AS

45

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

96

W

T

C

= 70 °C 62

T

A

= 25 °C

5.4

b, c

T

A

= 70 °C

3.5

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

R

thJA

18 23

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

11.3

www.vishay.com

2

Document Number: 69982

S09-0536-Rev. C, 06-Apr-09

Vishay Siliconix

Si7738DP

New Product

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

150 V

V

DS

Temperature Coefficient

ΔV

DS

/T

J

I

D

= 250 µA

200

mV/°C

V

GS(th)

Temperature Coefficient

ΔV

GS(th)

/T

J

- 10

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

24V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 150 V, V

GS

= 0 V

1

µA

V

DS

= 150 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 7.7 A

0.031 0.038 Ω

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 7.7 A

22 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 75 V, V

GS

= 0 V, f = 1 MHz

2100

pFOutput Capacitance

C

oss

160

Reverse Transfer Capacitance

C

rss

45

Total Gate Charge

Q

g

V

DS

= 75 V, V

GS

= 10 V, I

D

= 7.7 A

35 53

nCGate-Source Charge

Q

gs

8

Gate-Drain Charge

Q

gd

9

Gate Resistance

R

g

f = 1 MHz 1.6 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 75 V, R

L

= 12 Ω

I

D

≅ 6.2 A, V

GEN

= 10 V, R

g

= 1 Ω

15 25

ns

Rise Time

t

r

10 15

Turn-Off Delay Time

t

d(off)

25 40

Fall Time

t

f

10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

30

A

Pulse Diode Forward Current

I

SM

30

Body Diode Voltage

V

SD

I

S

= 6.2 A, V

GS

= 0 V

0.8 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 6.2 A, dI/dt = 100 A/µs, T

J

= 25 °C

75 115 ns

Body Diode Reverse Recovery Charge

Q

rr

245 370 nC

Reverse Recovery Fall Time

t

a

58

ns

Reverse Recovery Rise Time

t

b

17

Document Number: 69982

S09-0536-Rev. C, 06-Apr-09

www.vishay.com

3

Vishay Siliconix

Si7738DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0

12

24

36

48

60

0 1 2 3 4 5

V

GS

=10V thru 6 V

V

GS

=4V

V

GS

=5V

0.020

0.024

0.028

0.032

0.036

0.040

0 5 10 15 20 25 30

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

=10V

0

2

4

6

8

10

0 5 10 15 20 25 30 35

I

D

=7.7A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

=120V

V

DS

=75V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

01234567

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

T

C

= 25 °C

T

C

= - 55 °C

T

C

= 125 °C

C

rss

0

500

1000

1500

2000

2500

020406080 100

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

oss

0.4

0.8

1.2

1.6

2.0

2.4

- 50 - 25 0 25 50 75 100 125 15

0

T

J

-Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

V

GS

=10V

I

D

=7.7A

SI7738DP-T1-GE3

SI7738DP-T1-GE3

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