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SI7738DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
Vishay Siliconix
Si7738DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
0.0 0.2 0.4 0.6 0.8 1.0
T
J
= 150 °C
10
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
100
T
J
= 25 °C
1.8
2.2
2.6
3.0
3.4
3.8
4.2
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.00
0.02
0.04
0.06
0.08
0.10
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=7.7A
Single Pulse Power (Junction-to-Ambient)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area, Junction-to-Ambient
0
30
60
90
120
150
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
1
10
100
10
-4
10
-3
10
-2
10
-1
1
t
av
(s)
I
Dav
(A)
125 °C
25 °C
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
- Drain Current (A)
I
D
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10 s
1s
100 ms
1ms
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
10 ms
DC
100 µs
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
www.vishay.com
5
Vishay Siliconix
Si7738DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
8
16
24
32
40
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Package Limited
I
D
- Drain Current (A)
Power Derating
0
20
40
60
80
100
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 69982
S09-0536-Rev. C, 06-Apr-09
Vishay Siliconix
Si7738DP
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69982
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=65 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.1
10
-3
10
-2
110
-1
10
-4
0.02
0.05
P1-P3P4-P6P7-P9P10-P12P13-P13

SI7738DP-T1-GE3

Mfr. #:
Buy SI7738DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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