4©2015 Integrated Device Technology, Inc. Revision C, September 20, 2016
87946I-01 Datasheet
Table 4B. Power Supply DC Characteristics, V
DD
= 3.3V ± 5%, V
DDA
= V
DDB
= V
DDC
= 2.5V ± 5%, T
A
= -40°C to 85°C
Table 4C. LVCMOS/LVTTL DC Characteristics, T
A
= -40°C to 85°C
NOTE 1: Outputs terminated with 50 to V
DDx
/2. See Parameter Measurement Information section. Load Test Circuit diagrams.
Table 4D. LVPECL DC Characteristics, T
A
= -40°C to 85°C
NOTE 1: Common mode input voltage is defined as V
IH
.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Positive Supply Voltage 3.135 3.3 3.465 V
V
DDA,
V
DDB,
V
DDC
Output Supply Voltage 2.375 2.5 2.625 V
I
DD
Power Supply Current 54 mA
I
DDA,
I
DDB,
I
DDC
Output Supply Current 22 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage V
DD
= 3.465V 2 V
DD
+ 0.3 V
V
IL
Input Low Voltage V
DD
= 3.465V -0.3 0.8 V
I
IH
Input High Current V
DD
= V
IN
= 3.465V 150 µA
I
IL
Input Low Current V
DD
= 3.465V, V
IN
= 0V -5 µA
V
OH
OUtput High Voltage; NOTE 1 V
DDA
= V
DDB
= V
DDC
= 3.465V 2.6 V
V
OL
Output Low Voltage; NOTE 1 V
DDA
= V
DDB
= V
DDC
= 3.465V or 2.525V 0.5 V
I
OZL
Output Hi-Z Current Low -5 µA
I
OZH
Output Hi-Z Current High A
Symbol Parameter Test Conditions Minimum Typical Maximum Units
I
IH
Input High Current
PCLK V
DD
= V
IN
= 3.465V 150 µA
nPCLK V
DD
= V
IN
= 3.465V 5 µA
I
IL
Input Low Current
PCLK V
DD
= 3.465V, V
IN
= 0V -5 µA
nPCLK V
DD
= 3.465V, V
IN
= 0V -150 µA
V
PP
Peak-to-Peak Voltage 0.3 1.0 V
V
CMR
Common Mode Input Voltage; NOTE 1 GND + 1.5 V
DD
V
5©2015 Integrated Device Technology, Inc. Revision C, September 20, 2016
87946I-01 Datasheet
AC Electrical Characteristics
Table 5A. AC Characteristics, V
DD
= V
DDA
= V
DDB
= V
DDC
= 3.3V ± 5%, T
A
= -40°C to 85°C
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal
equilibrium has been reached under these conditions.
NOTE 1: Measured from the differential input crossing point to V
DDX
/2 of the output.
NOTE 2: Defined as skew within a bank of outputs at the same supply voltages and with equal load conditions.
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at V
DDX
/2.
NOTE 4: Defined as skew across banks of outputs operating at different frequencies with the same supply voltage and equal load conditions.
NOTE 5: Defined as skew between outputs on different devices operating at the same supply voltage and with equal load conditions. Using
the same type of inputs on each device, the outputs are measured at V
DDX
/2.
NOTE 6: These parameters are guaranteed by characterization. Not tested in production.
NOTE 7: This parameter is defined in accordance with JEDEC Standard 65.
Table 5B. AC Characteristics, V
DD
= 3.3V ± 5%, V
DDA
= V
DDB
= V
DDC
= 2.5V ± 5%, T
A
= -40°C to 85°C
For NOTES, please see Table 5A above.
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
MAX
Output Frequency 250 MHz
t
PD
Propagation Delay; NOTE 1 ƒ 250MHz 2.3 3.1 3.8 ns
tsk(b) Bank Skew, NOTE 2, 7 Measured on rising edge at V
DDX
/2 30 ps
tsk(o) Output Skew; NOTE 3, 7 Measured on rising edge at V
DDX
/2 130 ps
tsk(w)
Multiple Frequency Skew;
NOTE 4, 7
Measured on rising edge at V
DDX
/2 320 ps
tsk(pp) Part-to-Part Skew; NOTE 5, 7 Measured on rising edge at V
DDX
/2 700 ps
tjit
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter
Section
125MHz, 12kHz – 20MHz 0.19 ps
t
R
/ t
F
Output Rise/Fall Time 20% to 80% 400 950 ps
odc Output Duty Cycle 40 50 60 %
t
EN
Output Enable Time; NOTE 6 ƒ = 10MHz 3 ns
t
DIS
Output Disable Time; NOTE 6 ƒ = 10MHz 3 ns
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
MAX
Output Frequency 250 MHz
t
PD
Propagation Delay; NOTE 1 ƒ 250MHz 2.5 3.2 3.8 ns
tsk(b) Bank Skew, NOTE 2, 7 Measured on rising edge at V
DDX
/2 35 ps
tsk(o) Output Skew; NOTE 3, 7 Measured on rising edge at V
DDX
/2 120 ps
tsk(w)
Multiple Frequency Skew;
NOTE 4, 7
Measured on rising edge at V
DDX
/2 325 ps
tsk(pp) Part-to-Part Skew; NOTE 5, 7 Measured on rising edge at V
DDX
/2 700 ps
tjit
Buffer Additive Phase Jitter, RMS;
refer to Additive Phase Jitter
Section
125MHz, 12kHz – 20MHz 0.19 ps
t
R
/ t
F
Output Rise/Fall Time 20% to 80% 350 800 ps
odc Output Duty Cycle 40 50 57 %
t
EN
Output Enable Time; NOTE 6 ƒ = 10MHz 3 ns
t
DIS
Output Disable Time; NOTE 6 ƒ = 10MHz 3 ns
6©2015 Integrated Device Technology, Inc. Revision C, September 20, 2016
87946I-01 Datasheet
Additive Phase Jitter
The spectral purity in a band at a specific offset from the
fundamental compared to the power of the fundamental is called the
dBc Phase Noise. This value is normally expressed using a Phase
noise plot and is most often the specified plot in many applications.
Phase noise is defined as the ratio of the noise power present in a
1Hz band at a specified offset from the fundamental frequency to the
power value of the fundamental. This ratio is expressed in decibels
(dBm) or a ratio of the power in the 1Hz band to the power in the
fundamental. When the required offset is specified, the phase noise
is called a dBc value, which simply means dBm at a specified offset
from the fundamental. By investigating jitter in the frequency
domain, we get a better understanding of its effects on the desired
application over the entire time record of the signal. It is
mathematically possible to calculate an expected bit error rate given
a phase noise plot.
As with most timing specifications, phase noise measurements has
issues relating to the limitations of the equipment. Often the noise
floor of the equipment is higher than the noise floor of the device.
This is illustrated above. The device meets the noise floor of what is
shown, but can actually be lower. The phase noise is dependent on
the input source and measurement equipment.
Additive Phase Jitter @ 125MHz
12kHz to 20MHz = 0.19ps (typical)
SSB Phase Noise dBc/Hz
Offset Frequency (Hz)

87946AYI-01LFT

Mfr. #:
Manufacturer:
IDT
Description:
Clock Generators & Support Products 10 LVCMOS OUT BUFFER/DIVIDER
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