SQP90P06-07L_GE3 Datasheet SQP90P06-07L_GE3 | P1-P3

SQP90P06-07L

www.vishay.com

Vishay Siliconix

S14-0585-Rev. A, 17-Mar-14

1

Document Number: 62665

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• AEC-Q101 qualified

d

• 100 % R

g

and UIS tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square Pcb (Fr-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V)

-60

R

DS(on)

(Ω) at V

GS

= -10 V

0.0067

R

DS(on)

(Ω) at V

GS

= -4.5 V

0.0088

I

D

(A)

-120

Configuration Single

TO-220AB

Top View

S

D

G

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free and Halogen-free SQP90P06-07L-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

-60

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current

a

T

C

= 25 °C

a

I

D

-120

A

T

C

= 125 °C

-87

Continuous Source Current (Diode Conduction)

a

I

S

-120

Pulsed Drain Current

b

I

DM

-480

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

-80

Single Pulse Avalanche Energy

E

AS

320 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

300

W

T

C

= 125 °C

100

Operating Junction and Storage Temperature Range

T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient

PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain)

R

thJC

0.5

SQP90P06-07L

www.vishay.com

Vishay Siliconix

S14-0585-Rev. A, 17-Mar-14

2

Document Number: 62665

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN.

TYP.

MAX. UNIT

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0, I

D

= -250 μA

-60 - -

V

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA

-1.5 -2.0 -2.5

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

- - ± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

GS

= 0 V V

DS

= -60 V

---1

μA

V

GS

= 0 V V

DS

= -60 V, T

J

= 125 °C

---50

V

GS

= 0 V V

DS

= -60 V, T

J

= 175 °C

---250

On-State Drain Current

a

I

D(on)

V

GS

= -10 V V

DS

≤ -5 V

-120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= -10 V I

D

= -30 A

- 0.0056 0.0067

Ω

V

GS

= -10 V I

D

= -30 A, T

J

= 125 °C

- - 0.0110

V

GS

= -10 V I

D

= -30 A, T

J

= 175 °C

- - 0.0130

V

GS

= -4.5 V I

D

= -20 A

- 0.0070 0.0088

Forward Transconductance

b

g

fs

V

DS

= -15 V, I

D

= -30 A

-90-S

Dynamic

b

Input Capacitance

C

iss

V

GS

= 0 V V

DS

= -25 V, f = 1 MHz

- 11 423 14 280

pF Output Capacitance

C

oss

- 1034 1295

Reverse Transfer Capacitance

C

rss

- 809 1015

Total Gate Charge

c

Q

g

V

GS

= -10 V V

DS

= -30 V, I

D

= -110 A

- 180 270

nC

Gate-Source Charge

c

Q

gs

-31-

Gate-Drain Charge

c

Q

gd

-43-

Gate Resistance

R

g

f = 1 MHz 1.1 2.27 3.5 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= -30 V, R

L

= 0.27 Ω

I

D

≅ -110 A, V

GEN

= -10 V, R

g

= 1 Ω

-1523

ns

Rise Time

c

t

r

-2335

Turn-Off Delay Time

c

t

d(off)

-97146

Fall Time

c

t

f

-3248

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

---480A

Forward Voltage

V

SD

I

F

= -100 A, V

GS

= 0

--0.95-1.5V

SQP90P06-07L

www.vishay.com

Vishay Siliconix

S14-0585-Rev. A, 17-Mar-14

3

Document Number: 62665

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

40

80

120

160

200

0 3 6 9 12 15

V

GS

=10Vthru5V

V

GS

=3V

V

GS

=4V

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

40

80

120

160

200

0 1632486480

I

D

- Drain Current (A)

- Transconductance (S)

g

fs

T

C

= 125 °C

T

C

= 25 °C

T

C

= - 55 °C

C

rss

0

2500

5000

7500

10 000

12 500

15 000

0 102030405060

C

iss

C

oss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0

30

60

90

120

150

012345

T

C

= 125 °C

T

C

= 25 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

0

0.004

0.008

0.012

0.016

0.020

0 20 40 60 80 100 120

V

GS

=4.5V

V

GS

=10V

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

0

2

4

6

8

10

0 20 40 60 80 100 120 140 160 180 200

I

D

= 110 A

V

DS

=30V

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

SQP90P06-07L_GE3

SQP90P06-07L_GE3

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