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SQP90P06-07L_GE3

P1-P3P4-P6P7-P8
SQP90P06-07L
www.vishay.com
Vishay Siliconix
S14-0585-Rev. A, 17-Mar-14
4
Document Number: 62665
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=30A
V
GS
=10V
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
0
0.01
0.02
0.03
0.04
0.05
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
= 25 °C
T
J
= 150 °C
- 0.6
- 0.3
0
0.3
0.6
0.9
1.2
- 50 - 25 0 25 50 75 100 125 150 175
I
D
=5mA
I
D
= 250 μA
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
=10mA
- 80
- 76
- 72
- 68
- 64
- 60
SQP90P06-07L
www.vishay.com
Vishay Siliconix
S14-0585-Rev. A, 17-Mar-14
5
Document Number: 62665
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
100 ms, 1 s, 10 s, DC
I
D
Limited
SQP90P06-07L
www.vishay.com
Vishay Siliconix
S14-0585-Rev. A, 17-Mar-14
6
Document Number: 62665
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62665
.
1
0.1
0.01
0.2
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective
Transient
Thermal Impedance
Single Pulse
0.1
10
-3
10
-2
110
-1
10
-4
0.02
P1-P3P4-P6P7-P8

SQP90P06-07L_GE3

Mfr. #:
Buy SQP90P06-07L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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