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NTMFS4826NET3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 0
1 Publication Order Number:
NTMFS4826NE/D
NTMFS4826NE
Power MOSFET
30 V, 66 A, Single N−Channel, SO−8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• These are Pb−Free Devices*
Applications
• CPU Power Delivery
• DC−DC Converters
• High Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
15
A
T
A
= 85°C 10.8
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.16 W
Continuous Drain
Current R
q
JA
v
10 sec
T
A
= 25°C
I
D
24.3
A
T
A
= 85°C 17.5
Power Dissipation
R
q
JA,
t v 10 sec
T
A
= 25°C P
D
5.67 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
9.5
A
T
A
= 85°C 6.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.87 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
66
A
T
C
= 85°C 47.8
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
41.7 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
132 A
Current limited by package T
A
= 25°C I
Dmaxpkg
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−40 to
+150
°C
Source Current (Body Diode) I
S
41.7 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 27 A
pk
, L = 0.3 mH, R
G
= 25 W)
EAS 109 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
4826NE
AYWWG
G
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
5.9 mW @ 10 V
66 A
8.7 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4826NET1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4826NET3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
(Note: Microdot may be in either location)
55 A
NTMFS4826NE
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
3.0
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
57.8
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
143.5
Junction−to−Ambient − t v 10 sec
R
q
JA
22.1
Junction−to−To p
R
q
JT
9.7
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±16 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.45 1.8 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4.6 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A 4.3 5.9
mW
I
D
= 15 A 4.2
V
GS
= 4.5 V
I
D
= 30 A 6.6 8.7
I
D
= 15 A 6.5
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 30 A 62 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1850
pF
Output Capacitance C
OSS
333
Reverse Transfer Capacitance C
RSS
170
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
13.5 20
nC
Threshold Gate Charge Q
G(TH)
1.7
Gate−to−Source Charge Q
GS
5.1
Gate−to−Drain Charge Q
GD
4.5
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
32
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0 W
14.4
ns
Rise Time t
r
39.8
Turn−Off Delay Time t
d(OFF)
18.6
Fall Time t
f
5.2
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4826NE
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
9.5
ns
Rise Time t
r
22
Turn−Off Delay Time t
d(OFF)
25
Fall Time t
f
4.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.84 1.0
V
T
J
= 125°C 0.73
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
13.2
ns
Charge Time t
a
8.5
Discharge Time t
b
4.7
Reverse Recovery Charge Q
RR
3.5 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.93
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
0.9
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6543210
0
10
30
40
70
120
130
6543210
0
20
40
60
80
120
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
80
90
110
T
J
= 25°C
V
GS
= 4.2 V
5.0 V
4.5 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
100
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
100
60
50
20
10
30
50
70
110
90
P1-P3P4-P6

NTMFS4826NET3G

Mfr. #:
Buy NTMFS4826NET3G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 66A SO-8FL
Lifecycle:
New from this manufacturer.
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