NTMFS4826NET3G

NTMFS4826NE
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4
TYPICAL CHARACTERISTICS
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATETOSOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
109875432
0
0.002
0.004
0.006
0.008
0.014
0.018
0.020
5550453530252015
0
0.001
0.002
0.003
0.004
0.005
0.006
0.010
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAINTOSOURCE VOLTAGE (V)
12510075502502550
0.50
0.65
0.95
1.25
1.55
1.70
181412108642
10
1000
10,000
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
2520151050
0
500
750
1250
1500
1750
2250
2500
3025201050
0
2
4
5
9
10
11
12
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
611
0.010
ID = 30 A
T
J
= 25°C
40 60
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 11.5 V
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
150
ID = 30 A
V
GS
= 10 V
16
T
J
= 150°C
V
GS
= 0 V
T
J
= 125°C
250
T
J
= 25°C
C
oss
C
iss
C
rss
15
8
7
6
3
1
V
DS
, DRAINTOSOURCE VOLTAGE (V)
16
14
12
10
8
6
4
2
0
ID = 30 A
T
J
= 25°C
QT
V
DS
V
GS
Q
gd
Q
gs
0.012
0.016
0.007
0.008
0.009
100
20
1000
2000
1.40
1.10
0.80
NTMFS4826NE
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5
TYPICAL CHARACTERISTICS
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
12
24
28
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAINTOSOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE(°C)
1001010.1
0.1
1
10
100
1000
75 1501251005025
0
20
40
110
Figure 13. g
FS
vs. Drain Current Figure 14. Avalanche Characteristics
DRAIN CURRENT (A)
PULSE WIDTH (ms)
907060504020100
0
20
120
10,00010001001010.1
1
100
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
g
FS
(S)
I
d
(A)
V
DS
= 15 V
ID = 15 A
V
GS
= 11.5 V
t
f
t
r
t
d(off)
t
d(on)
8
10
14
16
18
20
26
30
22
V
GS
= 0 V
T
J
= 25°C
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
70
90
ID = 27 A
30 80 120
40
80
100
60
125°C 100°C 25°C
V
DS
= 1.5 V
10
100 110
10
30
50
100
60
80
NTMFS4826NE
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA01
ISSUE D
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
M 3.00 3.40
q 0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A 0.90 1.00
A1 0.00 −−−
b 0.33 0.41
c 0.23 0.28
D 5.15 BSC
D1 4.50 4.90
D2 3.50 −−−
E 6.15 BSC
E1 5.50 5.80
E2 3.45 −−−
e 1.27 BSC
G 0.51 0.61
K 0.51 −−−
L 0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
6
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
c
L
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
5
MAX
1.10
0.05
0.51
0.33
5.10
4.22
6.10
4.30
0.71
−−−
0.71
0.20
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
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NTMFS4826NET3G

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MOSFET N-CH 30V 66A SO-8FL
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