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BFG590/X,215

P1-P3P4-P6P7-P9P10-P11
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NXP Semiconductors
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Rev. 04 — 12 November 2007 Product data sheet
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER CODE
BFG590 %MH
BFG590/X %MN
PINNING
PIN
DESCRIPTION
BFG590 BFG590/X
1 collector collector
2 base emitter
3 emitter base
4 emitter emitter
Fig.1 Simplified outline SOT143B.
handbook, 2 columns
Top view
MSB014
12
34
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter −−20 V
V
CEO
collector-emitter voltage open base −−15 V
I
C
collector current (DC) −−200 mA
P
tot
total power dissipation T
s
≤ 60 °C −−400 mW
h
FE
DC current gain I
C
= 35 mA; V
CE
=8V 5090280
C
re
feedback capacitance I
C
= 0; V
CE
=8V; f=1MHz − 0.7 − pF
f
T
transition frequency I
C
= 80 mA; V
CE
=4V; f=1GHz − 5 − GHz
G
UM
maximum unilateral power gain I
C
= 80 mA; V
CE
=4V;
f = 900 MHz; T
amb
=25°C
− 13 − dB
|S
21
|
2
insertion power gain I
C
= 80 mA; V
CE
=4V;
f = 900 MHz; T
amb
=25°C
− 11 − dB
Rev. 04 - 12 November 2007
2 of 11
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 20 V
V
CEO
collector-emitter voltage open base − 15 V
V
EBO
emitter-base voltage open collector − 3V
I
C
collector current (DC) − 200 mA
P
tot
total power dissipation T
s
≤ 60 °C; see Fig.2; note 1 − 400 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 175 °C
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
600
200
0
400
MBG249
150
P
tot
(mW)
T
s
(
o
C)
THERMAL CHARACTERISTICS
Note
1. T
s
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
≤ 60 °C; note 1 290 K/W
Rev. 04 - 12 November 2007
3 of 11
P1-P3P4-P6P7-P9P10-P11

BFG590/X,215

Mfr. #:
Buy BFG590/X,215
Manufacturer:
NXP Semiconductors
Description:
RF TRANS NPN 15V 5GHZ SOT143B
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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