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BFG590/X,215

P1-P3P4-P6P7-P9P10-P11
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage I
C
= 0.1 mA; I
E
=0 20 −−V
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 10 mA; I
B
=0 15 −−V
V
(BR)EBO
emitter-base breakdown voltage I
E
= 0.1 mA; I
C
=0 3 −−V
I
CBO
collector-base leakage current V
CB
=10V; I
E
=0 −−100 nA
h
FE
DC current gain I
C
= 70 mA; V
CE
= 8 V; see Fig.3 60 120 250
f
T
transition frequency I
C
= 80 mA; V
CE
=4V;
f = 1 GHz; see Fig.5
− 5 − GHz
C
re
feedback capacitance I
C
= 0; V
CB
= 8 V; f = 1 MHz;
see Fig.4
− 0.7 − pF
G
UM
maximum unilateral power gain;
note 1
I
C
= 80 mA; V
CE
=4V;
f = 900 MHz; T
amb
=25°C
− 13 − dB
I
C
= 80 mA; V
CE
= 4 V; f = 2 GHz;
T
amb
=25°C
− 7.5 − dB
|S
21
|
2
insertion power gain I
C
= 80 mA; V
CE
=4V;
f = 900 MHz; T
amb
=25°C
− 11 − dB
G
UM
10
S
21
2
1S
11
2
–()1S
22
2
–()
--------------------------------------------------------------
dB.log=
Rev. 04 - 12 November 2007
4 of 11
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
V
CE
=8V.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook, halfpage
0
250
50
100
150
200
MRA749
10
−2
10
−1
11010
2
h
FE
I
C
(mA)
I
C
= 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
1.2
0.8
0.4
0
210
MLC057
468
V (V)
CB
C
re
(pF)
Fig.5 Transition frequency as a function of
collector current; typical values.
V
CE =
4 V; f = 1 GHz.
handbook, halfpage
8
0
4
6
10
MLC058
10
2
2
I (mA)
C
f
(GHz)
T
Rev. 04 - 12 November 2007
5 of 11
NXP Semiconductors Product specification
NPN 5 GHz wideband transistors BFG590; BFG590/X
f = 900 MHz; V
CE
=4V.
Fig.6 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
100
MLC059
20 40 60 80
gain
(dB)
I (mA)
C
G
UM
G
max
f = 2 GHz; V
CE
=4V.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
0
12
8
4
0
100
MLC060
20 40 60 80
gain
(dB)
I (mA)
C
G
UM
G
max
I
C
= 20 mA; V
CE
=4V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, halfpage
50
0
10
MLC061
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
G
max
MSG
Fig.9 Gain as a function of frequency;
typical values.
I
C
= 80 mA; V
CE
=4V.
handbook, halfpage
50
0
10
MLC062
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
G
max
MSG
Rev. 04 - 12 November 2007
6 of 11
P1-P3P4-P6P7-P9P10-P11

BFG590/X,215

Mfr. #:
Buy BFG590/X,215
Manufacturer:
NXP Semiconductors
Description:
RF TRANS NPN 15V 5GHZ SOT143B
Lifecycle:
New from this manufacturer.
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