IXTY12N06TTRL

2008 IXYS CORPORATION All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 60 V
V
GS(th)
V
DS
= V
GS
, I
D
= 25μA 2.0 4.0 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ± 50 nA
I
DSS
V
DS
= V
DSS
1 μA
V
GS
= 0V T
J
= 150°C 100 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Notes 1, 2 85 mΩ
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTU12N06T
IXTY12N06T
V
DSS
= 60V
I
D25
= 12A
R
DS(on)
85m
ΩΩ
ΩΩ
Ω
DS99947(4/08)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Ultra-low On Resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
175 °C Operating Temperature
Advantages
z
Easy to mount
z
Space savings
z
High power density
Applications
z
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
z
DC/DC Converters and Off-line UPS
z
Primary Switch for 24V and 48V
Systems
z
High Current Switching
Applications
Preliminary Technical Information
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C60V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 60 V
V
GSM
Transient ±20 V
I
D25
T
C
= 25°C12A
I
DM
T
C
= 25°C, pulse width limited by T
JM
30 A
I
LRMS
Package Current Limit, RMS TO-252 25 A
I
AR
T
C
= 25°C 3 A
E
AS
T
C
= 25°C20mJ
P
D
T
C
= 25°C33W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum lead temperature for soldering 300 °C
T
SOLD
1.6 mm (0.062 in.) from case for 10s 260 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-251 0.40 g
TO-252 0.35 g
TO-251 (IXTU)
D
S
G
D (TAB)
TO-252 (IXTY)
D (TAB)
S
G
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTU12N06T
IXTY12N06T
Notes: 1. Pulse test: t 300μs; duty cycle, d 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact location must be
5mm or less from the package body.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-251 (IXTU) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-252 (IXTY) Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Notes 1 2.9 4.7 S
C
iss
256 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 46 pF
C
rss
10.4 pF
t
d(on)
12 ns
t
r
29 ns
t
d(off)
29 ns
t
f
18 ns
Q
g(on)
3.4 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 6A 1.0 nC
Q
gd
0.9 nC
R
thJC
4.5 °C/W
Source-Drain Diode Characteristic Values
Symbol Test Conditions
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 12 A
I
SM
Repetitive, pulse width limited by T
JM
48 A
V
SD
I
F
= 6A, V
GS
= 0V, Note 1 1.2 V
t
rr
30 ns
I
RM
1.34
A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 6A
R
G
= 50Ω (External)
I
F
= 6A, V
GS
= 0V, -di/dt = 100A/μs
V
R
= 30V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 BSC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
1. Gate 2.Drain
3. Source 4. Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
2008 IXYS CORPORATION All rights reserved
IXTU12N06T
IXTY12N06T
Fig. 1. Output Characteristics
@ 25ºC
0
1
2
3
4
5
6
7
8
9
10
11
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
4
8
12
16
20
24
28
32
0 2 4 6 8 10 12 14 16 18
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
5V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150ºC
0
1
2
3
4
5
6
7
8
9
10
11
12
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 5. R
DS(on)
Normalized to I
D
= 6A Value
vs. Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30 35
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - -
-
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
13
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes

IXTY12N06TTRL

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 60V 12A TO-252
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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