2008 IXYS CORPORATION All rights reserved
IXYS REF: T_12N06T(U1) 4-03-08-A
IXTU12N06T
IXTY12N06T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
12
14
16
18
20
22
24
26
28
30
32
34
6789101112
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 50Ω
V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
10
12
14
16
18
20
22
24
26
28
30
32
50 60 70 80 90 100 110 120
R
G
- Ohms
t
r
-
Nanoseconds
10
11
12
13
14
15
16
17
18
19
20
21
t
d ( o n )
-
Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 6A, 12A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
17
18
19
20
21
22
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
16
18
20
22
24
26
28
30
32
34
36
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 50Ω, V
GS
= 10V
V
DS
= 30V
I
D
= 12A
I
D
= 6A
I
D
= 6A
I
D
= 12A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
17
18
19
20
21
6 7 8 9 10 11 12
I
D
- Amperes
t
f
- Nanoseconds
16
18
20
22
24
26
28
30
32
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 50Ω, V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
12
14
16
18
20
22
24
26
28
30
32
34
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 50Ω
V
GS
= 10V
V
DS
= 30V
I
D
= 12A
I
D
= 6A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
10
15
20
25
30
35
40
45
50 60 70 80 90 100 110 120
R
G
- Ohms
t
f
- Nanoseconds
16
20
24
28
32
36
40
44
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 12A
I
D
= 6A
