Characteristics T835T-8FP
2/9 DocID024248 Rev 2
1 Characteristics
Table 2. Absolute maximum ratings (T
j
= 25 °C unless otherwise stated)
Symbol Parameter Value Unit
I
T(rms)
On-state rms current (full sine wave) T
c
= 113°C 8 A
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 60
A
F = 60 Hz t = 16.7 ms 63
I
²
tI
²
t value for fusing, T
j
initial = 25 °C t
p
= 10 ms 24 A
²
s
V
DRM
,
V
RRM
Repetitive surge peak off-state voltage
T
j
= 150 °C 600
V
T
j
= 125 °C 800
V
DSM
,
V
RSM
Non repetitive surge peak off-state voltage t
p
= 10 ms 900 V
dI/dt
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 100 Hz 100 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 150 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 150 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
V
ins
Insulation rms voltage, 1 minute 2 kV
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise stated)
Symbol Test conditions Quadrant Value Unit
I
GT
(1)
V
D
= 12 V, R
L
= 30 Ω I - II - III
Min. 1.75
mA
Max. 35
V
GT
V
D
= 12 V, R
L
= 30 Ω
I - II - III Max. 1.3 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ, T
j
= 150 °C I - II - III Min. 0.2 V
I
H
(1)
1. For both polarities of A2 referenced to A1
I
T
= 500 mA Max. 40 mA
I
L
I
G
= 1.2 I
GT
I - III Max. 60 mA
II Max. 65 mA
dV/dt
(1)
V
D
= 536 V, gate open
T
j
= 125 °C
Min.
2000 V/µs
V
D
= 402 V, gate open
T
j
= 150 °C
1000 V/µs
(dI/dt)c
(1)
Without snubber (dV/dt)c ≥ 20 V/µs)
T
j
= 125 °C
Min.
8
A/ms
T
j
= 150 °C 4
