Characteristics T835T-8FP
4/9 DocID024248 Rev 2
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
I
TM
(A)
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
j
max :
V
to
= 0.85 V
R
d
= 57 mW.
T
j
= 150 °C
T
j
= 25 °C
V
TM
(V)
I(A)
TSM
0
10
20
30
40
50
60
70
1 10 100 1000
Non repetitive
T
j
initial=25 °C
Repetitive
T
C
= 113 °C
One cycle
t = 20 ms
Number of cycles
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I
2
t
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
I (A), I²t (A²s)
TSM
10
100
1000
0.01 0.10 1.00 10.00
dI/dt limitation: 100 A/µs
I
TSM
I²t
T
j
initial=25 °C
t(ms)
p
Sinusoidal pulse with width t <10 ms
p
V [T ] / V [T = 25 °C]
GT j GT j
I [T ] / I [T = 25 °C],
GT j GT j
T
j
(°C)
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
I
GT
Q1-Q2
I
GT
Q3
V
GT
Typical values
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
Figure 10. Relative variation of holding and
latching current versus junction temperature
(typical values)
dV/dt [T
j
]/dV/dt[T
j
=15 °C]
0
0
1
2
3
4
5
25 50 75 100 125 150
V
D
=V
R
=402V
(dV/dt) > 5KV/µs
T
j
(°C)
I , I [T ] / I , I [T = 25 °C]
HL j HL j
T (°C)
j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
I
I
L
H
