6. The refresh rate is required to double when 85°C < T
C
95°C.
16GB (x8, ECC, QR) 204-Pin 1.35V DDR3L SORDIMM
Electrical Specifications
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
16GB (x8, ECC, QR) 204-Pin 1.35V DDR3L SORDIMM
DRAM Operating Conditions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 16GB (Die Revision E)
Values are for the MT41K1G8 DDR3L SDRAM only and are computed from values specified in the 1.35V TwinDie 8Gb com-
ponent data sheet
Parameter
Combined
Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
CDD0
1152 1053 1017 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
CDD1
1251 1188 1152 mA
Precharge power-down current: Slow exit I
CDD2P0
648 648 648 mA
Precharge power-down current: Fast exit I
CDD2P1
774 738 720 mA
Precharge quiet standby current I
CDD2Q
900 828 810 mA
Precharge standby current I
CDD2N
900 846 828 mA
Precharge standby ODT current I
CDD2NT
1026 954 900 mA
Active power-down current I
CDD3P
1395 1260 1152 mA
Active standby current I
CDD3N
1008 954 900 mA
Burst read operating current I
CDD4R
2070 1890 1728 mA
Burst write operating current I
CDD4W
1782 1620 1476 mA
Refresh current I
CDD5B
2727 2637 2592 mA
Self refresh temperature current: MAX T
C
= 85°C I
CDD6
720 720 720 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
CDD6ET
900 900 900 mA
All banks interleaved read current I
CDD7
2637 2340 2061 mA
Reset current I
CDD8
720 720 720 mA
16GB (x8, ECC, QR) 204-Pin 1.35V DDR3L SORDIMM
I
DD
Specifications
PDF: 09005aef84e875c1
kss36c2gx72rhz.pdf - Rev. B 5/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT36KSS2G72RHZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MOD DDR3L SDRAM 16GB 204SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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