NSQA12VAW5T2G

© Semiconductor Components Industries, LLC, 2009
October, 2017 Rev. 6
1 Publication Order Number:
NSQA6V8AW5T2/D
NSQA6V8AW5T2 Series
ESD Protection Diode
Single Line CAN/LIN Bus Protector
This integrated surge protection device (surge protection) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package.
These devices are ideal for situations where board space is at a premium.
Features
Low Clamping Voltage
Small SC88A SMT Package
Stand Off Voltage: 5 V
Low Leakage Current < 1 mA
Four Separate Unidirectional Configurations for Protection
ESD Protection: IEC6100042: Level 4
MILSTD 883C Method 30156: Class 3
PbFree Packages are Available
Benefits
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Minimize Power Consumption of the System
Minimize PCB Board Space
Typical Applications
Instrumentation Equipment
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
Cellular and Portable Equipment
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Power Dissipation
8 20 msec Double Exponential
Waveform (Note 1)
P
PK
20 W
Steady State Power 1 Diode (Note 2) P
D
380 mW
Thermal Resistance
JunctiontoAmbient
Above 25°C, Derate
R
q
JA
327
3.05
°C/W
mW/°C
Operating Junction Temperature
Range
T
J
40 to +125 °C
Storage Temperature Range T
stg
55 to +150 °C
Lead Solder Temperature Maximum
10 Seconds Duration
T
L
260 °C
IEC ^100042 (ESD) Contact $8.0 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 6.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%.
Mounted on FR4 board with min pad.
See Application Note AND8308/D for further description of survivability specs.
5
4
1
2
3
Device Package Shipping
ORDERING INFORMATION
NSQA6V8AW5T2 SC88A 3000/Tape & Reel
x = H for NSQA6V8AW5T2
X for NSQA12VAW5T2
M = Date Code
G = PbFree Package
MARKING DIAGRAM
www.onsemi.com
SC88A/SOT353
CASE 419A02
132
45
NSQA6V8AW5T2G SC88A
(PbFree)
3000/Tape & Reel
NSQA12VAW5T2 3000/Tape & ReelSC88A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NSQA12VAW5T2G 3000/Tape & ReelSC88A
(PbFree)
6x MG
G
(Note: Microdot may be in either location)
NSQA6V8AW5T2 Series
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
P
pk
Peak Power Dissipation
C Capacitance @ V
R
= 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
NSQA6V8AW5T2
Breakdown Voltage (I
T
= 1 mA) (Note 3) V
BR
6.4 6.8 7.1 V
Leakage Current (V
RWM
= 5.0 V) I
R
1.0
mA
Clamping Voltage 1 (I
PP
= 1.6 A) (Note 4) V
C
13 V
Maximum Peak Pulse Current (Note 4) I
PP
1.6 A
Junction Capacitance (V
R
= 0 V, f = 1 MHz)
(V
R
= 3.0 V, f = 1 MHz)
C
J
12
6.7
15
9.5
pF
Clamping Voltage Per IEC6100042 V
C
Figures 1 and 2 V
NSQA12VAW5T2
Breakdown Voltage (I
T
= 5 mA) (Note 3) V
BR
11.4 12.0 12.7 V
Leakage Current (V
RWM
= 9.0 V) I
R
0.05
mA
Zener Impedence (I
T
= 5 mA) Z
Z
30
W
Clamping Voltage 1 (I
PP
= 0.9 A) (Note 4) V
C
23 V
Maximum Peak Pulse Current (Note 4) I
PP
0.9 A
Junction Capacitance (V
R
= 0 V, f = 1 MHz) C
J
15 pF
Clamping Voltage Per IEC6100042 (Note 5) V
C
Figures 1 and 2 V
3. V
BR
is measured at pulse test current I
T
.
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
NSQA6V8AW5T2 Series
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3
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC6100042
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC6100042

NSQA12VAW5T2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors Low Cap. TVS Quad Array for ESD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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