BFP650FH6327XTSA1 Datasheet BFP650FH6327XTSA1, BFP 650F E6327 | P1-P3

2007-08-09

BFP650F

1

2

4

3

NPN Silicon Germanium RF Transistor*

• For medium power amplifiers and driver stages

• High OIP

3

and P

-1dB

• Ideal for low phase noise oscilators

• Maxim. available Gain G

ma

= 21.5 dB at 1.8 GHz

Noise figure F = 0.8 dB at 1.8 GHz

• 70 GHz f

T

- Silicon Germanium technology

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

* Short term description

1

34

2

Direction of Unreeling

Top View

XYs

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP650F R5s

1=B 2=E 3=C 4=E - - TSFP-4

1

Pb-containing package may be available upon special request

2007-08-09

BFP650F

2

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

T

A

> 0 °C

T

A

≤ 0 °C

V

CEO

4

3.7

V

Collector-emitter voltage V

CES

13

Collector-base voltage V

CBO

13

Emitter-base voltage V

EBO

1.2

Collector current I

C

150 mA

Base current I

B

10

Total power dissipation

1)

T

S

≤ 85°C

P

tot

500 mW

Junction temperature T

j

150 °C

Ambient temperature T

A

-65 ... 150

Storage temperature T

st

g

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

2)

R

thJS

≤ 130

K/W

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 3 mA, I

B

= 0

V

(BR)CEO

4 4.5 - V

Collector-emitter cutoff current

V

CE

= 13 V, V

BE

= 0

I

CES

- - 100 µA

Collector-base cutoff current

V

CB

= 5 V, I

E

= 0

I

CBO

- - 100 nA

Emitter-base cutoff current

V

EB

= 0.5 V, I

C

= 0

I

EBO

- - 10 µA

DC current gain

I

C

= 80 mA, V

CE

= 3 V, pulse measured

h

FE

110 180 270 -

1

T

S

is measured on the collector lead at the soldering point to the pcb

2

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2007-08-09

BFP650F

3

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

I

C

= 80 mA, V

CE

= 3 V, f = 1 GHz

f

T

- 42 - GHz

Collector-base capacitance

V

CB

= 3 V, f = 1 MHz, V

BE

= 0 ,

emitter grounded

C

cb

- 0.26 - pF

Collector emitter capacitance

V

CE

= 3 V, f = 1 MHz, V

BE

= 0 ,

base grounded

C

ce

- 0.45 -

Emitter-base capacitance

V

EB

= 0.5 V, f = 1 MHz, V

CB

= 0 ,

collector grounded

C

eb

- 1.3 -

Noise figure

I

C

= 10 mA, V

CE

= 3 V, f = 1.8 GHz, Z

S

= Z

Sopt

I

C

= 10 mA, V

CE

= 3 V, f = 6 GHz, Z

S

= Z

Sopt

F

-

0.8

1.9

-

dB

Power gain, maximum available

1)

I

C

= 80 mA, V

CE

= 3 V, Z

S

= Z

Sopt,

Z

L

= Z

Lopt

,

f = 1.8 GHz

f = 6 GHz

G

ma

-

21.5

11

-

Transducer gain

I

C

= 80 mA, V

CE

= 3 V, Z

S

= Z

L

= 50 Ω,

f = 1.8 GHz

f = 6 GHz

|S

21e

|

2

15

-

17.5

7.5

-

dB

Third order intercept point at output

2)

V

CE

= 3 V, I

C

= 80 mA, f = 1.8 GHz,

Z

S

= Z

L

= 50 Ω

IP

3

- 31 - dBm

1dB Compression point at output

I

C

= 80 mA, V

CE

= 3 V, Z

S

= Z

L

= 50 Ω,

f = 1.8 GHz

P

-1dB

- 17.5 -

1

G

ma

= |

S

21e

/

S

12e

| (k-(k²-1)

1/2

)

2

IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

Ω from 0.1 MHz to 6 GHz

BFP650FH6327XTSA1

BFP650FH6327XTSA1

Products related to this Datasheet