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BFP650FH6327XTSA1

P1-P3P4-P6P7-P7
2007-08-09
BFP650F
4
Total power dissipation P
tot
= ƒ(T
S
)
0 15 30 45 60 75 90 105 120 135 150
0
50
100
150
200
250
300
350
400
450
500
550
T
S
[°C]
Ptot [mW]
Collector-base capacitance C
cb
= ƒ (V
CB
)
f = 1 MHz
0 1 2 3 4 5 6 7 8 9 10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
CB
[V]
C
cb
[pF]
Transition frequency f
T
= ƒ(I
C
)
V
CE
= parameter in V, f = 1 GHz
0 20 40 60 80 100 120 140 160 180
0
5
10
15
20
25
30
35
40
45
I
C
[mA]
f
T
[GHz]
3.00V
2.00V
1.00V
0.50V
Power gain G
ma
, G
ms
= ƒ (f)
V
CE
= 3 V, I
C
= 80 mA
0 1 2 3 4 5 6
0
5
10
15
20
25
30
35
40
45
50
f [GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
2007-08-09
BFP650F
5
Power gain G
ma
, G
ms
= ƒ (I
C
)
V
CE
= 3 V
f = parameter in GHz
0 20 40 60 80 100 120 140 160 180 200
6
8
10
12
14
16
18
20
22
24
26
28
30
I
C
[mA]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
Power gain G
ma
, G
ms
= ƒ (V
CE
)
I
C
= 80 mA
f = parameter in GHz
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
5
10
15
20
25
30
V
CE
[V]
G [dB]
6.00GHz
5.00GHz
4.00GHz
3.00GHz
2.40GHz
1.80GHz
0.90GHz
2007-08-09
BFP650F
6
Package TSFP-4
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
BFP420F
Type code
Pin 1
0.35
0.45
0.9
0.5 0.5
4
0.2
1.55
0.7
1.4
8
Pin 1
±0.05
0.2
±0.05
1.4
12
10˚ MAX.
±0.05
0.8
1.2
±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5
±0.05
0.5
±0.05
43
Manufacturer
P1-P3P4-P6P7-P7

BFP650FH6327XTSA1

Mfr. #:
Buy BFP650FH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors RF BIP TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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