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T1235T-8G-TR

P1-P3P4-P6P7-P9P10-P10
December 2017
DocID031279 Rev 1
1/10
This is information on a product in full production.
www.st.com
T1235T-8G
12 A Snubberless™ Triac
Datasheet -production data
Features
High static dV/dt
High dynamic turn-off commutation (dl/dt)c
150 °C maximum T
j
Three quadrants
Surge capability V
DSM
, V
RSM
= 900 V
Benefits
High immunity to turn-on thanks to high
static dV/dt
Better turn-off in high temperature
environments thanks to (dI/dt)c
Increase of thermal margin due to extended
working T
j
up to 150 °C
Good thermal resistance due to
non-insulated tab
Applications
General purpose AC line load switching
Motor control circuits
Home appliances
Heating
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in SMD, the T1235T-8G Triac can be
used for the on/off or phase angle control
function in general purpose AC switching where
high commutation capability is required. This
device can be used without a snubber RC circuit
when the limits defined are respected.
D²PAK package is UL94-V0 flammability resin
compliance.
Package environmentally friendly Ecopack
®
2
graded (RoHS and Halogen Free compliance).
Snubberless™ is a trademark of
STMicroelectronics.
Figure 1: Functional diagram
Table 1: Device summary
Symbol
Value
I
T(RMS)
12
A
V
DRM
/V
RRM
800
V
V
DSM
/V
RSM
900
V
I
GT
35
mA
D²PAK
A2
A2
A1
G
A2
G
A1
A2: Anode2
A1: Anode1
G: Gate
Characteristics
T1235T-8G
2/10
DocID031279 Rev 1
1 Characteristics
Table 2: Absolute maximum ratings (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
T
c
= 124 °C
12
A
I
TSM
Non repetitive surge peak on-state current,
T
j
initial = 25 °C
t
p
= 16.7 ms
95
A
t
p
= 20 ms
90
I
2
t
I
2
t value for fusing
T
j
initial = 25 °C
54
A
2
s
dl/dt
Critical rate of rise of on-state current,
I
G
= 2 x I
GT
, tr ≤ 100 ns
f = 100 Hz
100
A/µs
V
DRM
/V
RRM
Repetitive peak off-state voltage
T
j
= 150 °C
600
V
T
j
= 125 °C
800
V
V
DSM
/V
RSM
Non Repetitive peak off-state voltage
t
p
= 10 ms
900
V
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 150 °C
1
W
T
stg
Storage junction temperature range
-40 to +150
°C
T
j
Operating junction temperature range
-40 to +150
°C
Table 3: Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants; T
j
Value
Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
I - II - III
Min.
1.75
mA
V
D
= 12 V, R
L
= 33 Ω
I - II - III
Max.
35
mA
V
GT
V
D
= 12 V, R
L
= 33 Ω
I - II - III
Max.
1.3
V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ, T
j
= 150 °C
I - II - III
Min.
0.2
V
I
L
I
G
= 1.2 x I
GT
I - III
Max.
60
mA
I
G
= 1.2 x I
GT
II
Max.
80
mA
I
H
(1)
I
T
= 500 mA, gate open
Max.
40
mA
dV/dt
(1)
V
D
= 536 V, gate open
T
j
= 125 °C
Min.
2000
V/µs
V
D
= 402 V, gate open
T
j
= 150 °C
Min.
1000
V/µs
(dl/dt)c
(1)
Without snubber, (dV/dt)c > 20 V/µs
T
j
= 125 °C
Min.
12
A/ms
T
j
= 150 °C
Min.
6
A/ms
Notes:
(1)
For both polarities of A2 referenced to A1.
T1235T-8G
Characteristics
DocID031279 Rev 1
3/10
Table 4: Static characteristics
Symbol
Test conditions
T
j
Value
Unit
V
TM
(1)
I
T
= 17 A, t
p
= 380 µs
25 °C
Max.
1.6
V
V
TO
(1)
Threshold on-state voltage
150 °C
Max.
0.85
V
R
D
(1)
Dynamic resistance
150 °C
Max.
50
mΩ
I
DRM
/I
RRM
V
DRM
= V
RRM
= 800 V
25 °C
Max.
5
µA
125°C
1
mA
V
DRM
= V
RRM
= 600 V
150 °C
Max.
3.1
mA
Notes:
(1)
For both polarities of A2 referenced to A1.
Table 5: Thermal resistance
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
D²PAK
Max.
1.6
°C/W
P1-P3P4-P6P7-P9P10-P10

T1235T-8G-TR

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
Triacs 12 A D2PAK Snubberless Triac
Lifecycle:
New from this manufacturer.
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