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T1235T-8G-TR
P1-P3
P4-P6
P7-P9
P10-P10
Characteristics
T1235T-
8G
4/
10
DocID031279 Rev 1
1.1
Characteristics (curves)
Figure 2: Maximum power dissipation versus on-
state RMS current
Figure 3: On-state RMS current versus case
temperature
Figure 4
:
On
-state RMS current versus ambient
temperature (free air convection)
Figure 5: Relative variation of thermal impedance
versus pulse duration
Figure 6: Relative variation of gate trigger voltage
and current versus junction temperature
(typical values)
Figure 7: Relative variation of holding current and
latching current versus junction temperature
(typical values)
0
2
4
6
8
10
1
2
1
4
1
6
18
0
2
4
6
8
1
0
1
2
P(W)
I
T
(RMS)
(A)
1
80
°
α
= 180°
0
4
8
1
2
1
6
0
2
5
5
0
7
5
1
0
0
1
2
5
1
5
0
I
T(RMS)
(A)
T
c
(°C)
α
= 180°
0
.
0
0
.
5
1
.
0
1
.
5
2
.
0
2
.
5
3
.
0
3
.
5
4
.
0
0
2
5
5
0
7
5
1
0
0
1
25
1
5
0
I
T(RMS)
(A)
T
a
(°C)
α
= 18
0
D
2
P
AK
Scu =
1 cm
2
Epox
y PCB
FR4 cop
per th
ickness =
35 µm
1
.0E
-0
2
1
.0E
-0
1
1
.0E
+0
0
1
.0E
-0
3
1
.0E
-0
2
1
.0E
-0
1
1
.0E
+0
0
1
.0E
+
0
1
1
.0E
+0
2
1
.0E
+
0
3
K = [Z
th
/R
th
]
t
p
(s)
Z
th(j-c)
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
50
75
100
125
150
I
GT
,V
GT
[T
j
] / I
GT
,V
GT
[T
j
= 25 °C]
T
j
(°C)
I
GT
Q3
V
GT
Q1-Q2-Q3
I
GT
Q1-Q2
0.0
0.5
1.0
1.5
-50
-25
0
25
50
7
5
100
1
25
150
2.0
I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]
T
j
(°C)
I
H
I
L
T1235T-
8G
Characteristics
DocID031279 Rev 1
5/
10
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure
10
: On-state characteristics
(maximum values)
Figure
11
: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure
12
: Relative variation of static dV/dt
immunity versus junction temperature
Figure
13
: Relative variation of leakage current
versus junction temperature for different values of
blocking voltage
0
50
10
0
1
10
10
0
10
00
I
T
SM
(A
)
Nu
mb
er
of
cy
cles
Rep
etitiv
e
T
c
= 12
4°C
Non
r
epetit
ive
T
j
initia
l = 25
°C
t=2
0m
s
O
n
e c
yc
le
10
10
0
10
00
10
000
0.0
1
0.1
0
1.
00
10
.00
I
T
SM
(A)
t
(ms)
p
T in
itia
l=
25
°C
j
d
I/d
t l
im
it
ati
on
:
1
00
A/
µs
1
10
100
0
1
2
3
4
5
I
T
M
(A)
V
TM
(V)
T
j
ma
x.
V
to
= 0
.85 V
R
d
= 5
0 m
Ω
T
j
= 1
50 °C
T
j
= 2
5 °C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25
50
75
100
125
150
(dl/dt)c [T
j
] / (dl/dt)c [T
j = 150 °C
]
T
j
(°C)
0
1
2
3
4
5
6
25
50
75
100
125
150
dV/dt [T
j
] / dV/dt [T
j = 150 °C
]
T
j
(°C)
V
D
= V
R
= 402 V
1.0
E-0
3
1.0
E-0
2
1.0
E-0
1
1.0
E+
00
25
50
75
10
0
12
5
15
0
I
DRM
, I
RRM
at [T
j
] / I
DRM
, I
RRM
at [T
j max.
]*
T
j
(°C)
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
*[T
j
ma
x =
12
5 °C
; V
D
RM
, V
R
RM
= 8
00 V
]
[T
j
ma
x =
15
0 °C
; V
D
RM
, V
R
RM
= 6
00 V
]
Package
information
T1235T-
8G
6/
10
DocID031279 Rev 1
2
Package information
In order to meet environm
ental requirements, ST off
ers these devices in different grades of
ECOPACK
®
packages, depending on t
heir level of environmental compliance. ECOPACK
®
specifications, grade definit
ions and product status are
available at:
www.st.com
.
ECOPACK
®
is an ST trademar
k.
ECOPACK
®
2
compliant
Lead
-
free package leads finishing
Molding compound resin is hal
ogen-
free and meets UL standard level V0
2.1
D²PAK package information
Figure
14
: D²PAK package outline
P1-P3
P4-P6
P7-P9
P10-P10
T1235T-8G-TR
Mfr. #:
Buy T1235T-8G-TR
Manufacturer:
STMicroelectronics
Description:
Triacs 12 A D2PAK Snubberless Triac
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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EMS
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