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FM93C46 Rev. D.1
FM93C46 1024-Bit Serial CMOS EEPROM
(MICROWIRE
TM
Synchronous Bus)
Absolute Maximum Ratings (Note 1)
Ambient Storage Temperature -65°C to +150°C
All Input or Output Voltages +6.5V to -0.3V
with Respect to Ground
Lead Temperature
(Soldering, 10 sec.) +300°C
ESD rating 2000V
Operating Conditions
Ambient Operating Temperature
FM93C46L/LZ 0°C to +70°C
FM93C46LE/LZE -40°C to +85°C
FM93C46LV/LZV -40°C to +125°C
Power Supply (V
CC
) 2.7V to 5.5V
DC and AC Electrical Characteristics V
CC
= 2.7V to 4.5V unless otherwise specified. Refer to
page 3 for V
CC
= 4.5V to 5.5V.
Symbol Parameter Conditions Min Max Units
I
CCA
Operating Current CS = V
IH
, SK=250 KHz 1 mA
I
CCS
Standby Current CS = V
IL
L 10 µA
LZ (2.7V to 4.5V) 1 µA
I
IL
Input Leakage V
IN
= 0V to V
CC
±1 µA
I
OL
Output Leakage (Note 2)
V
IL
Input Low Voltage -0.1 0.15V
CC
V
V
IH
Input High Voltage 0.8V
CC
V
CC
+1
V
OL
Output Low Voltage I
OL
= 10µA 0.1V
CC
V
V
OH
Output High Voltage I
OH
= -10µA 0.9V
CC
f
SK
SK Clock Frequency (Note 3) 0 250 KHz
t
SKH
SK High Time 1 µs
t
SKL
SK Low Time 1 µs
t
CS
Minimum CS Low Time (Note 4) 1 µs
t
CSS
CS Setup Time 0.2 µs
t
DH
DO Hold Time 70 ns
t
DIS
DI Setup Time 0.4 µs
t
CSH
CS Hold Time 0 ns
t
DIH
DI Hold Time 0.4 µs
t
PD
Output Delay 2 µs
t
SV
CS to Status Valid 1 µs
t
DF
CS to DO in Hi-Z CS = V
IL
0.4 µs
t
WP
Write Cycle Time 15 ms
Capacitance T
A
= 25°C, f = 1 MHz or
250 KHz (Note 5)
Symbol Test Typ Max Units
C
OUT
Output Capacitance 5 pF
C
IN
Input Capacitance 5 pF
Note 1: Stress above those listed under Absolute Maximum Ratings may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of the specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: Typical leakage values are in the 20nA range.
Note 3: The shortest allowable SK clock period = 1/f
SK
(as shown under the f
SK
parameter). Maximum
SK clock speed (minimum SK period) is determined by the interaction of several AC parameters stated
in the datasheet. Within this SK period, both t
SKH
and t
SKL
limits must be observed. Therefore, it is not
allowable to set 1/f
SK
= t
SKHminimum
+ t
SKLminimum
for shorter SK cycle time operation.
Note 4: CS (Chip Select) must be brought low (to V
IL
) for an interval of t
CS
in order to reset all internal
device registers (device reset) prior to beginning another opcode cycle. (This is shown in the opcode
diagram on the following page.)
Note 5: This parameter is periodically sampled and not 100% tested.
AC Test Conditions
V
CC
Range V
IL
/V
IH
V
IL
/V
IH
V
OL
/V
OH
I
OL
/I
OH
Input Levels Timing Level Timing Level
2.7V V
CC
5.5V 0.3V/1.8V 1.0V 0.8V/1.5V ±10µA
(Extended Voltage Levels)
4.5V V
CC
5.5V 0.4V/2.4V 1.0V/2.0V 0.4V/2.4V 2.1mA/-0.4mA
(TTL Levels)
Output Load: 1 TTL Gate (C
L
= 100 pF)
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www.fairchildsemi.com
FM93C46 Rev. D.1
FM93C46 1024-Bit Serial CMOS EEPROM
(MICROWIRE
TM
Synchronous Bus)
Pin Description
Chip Select (CS)
This is an active high input pin to FM93C46 EEPROM (the device)
and is generated by a master that is controlling the device. A high
level on this pin selects the device and a low level deselects the
device. All serial communications with the device is enabled only
when this pin is held high. However this pin cannot be permanently
tied high, as a rising edge on this signal is required to reset the
internal state-machine to accept a new cycle and a falling edge to
initiate an internal programming after a write cycle. All activity on the
SK, DI and DO pins are ignored while CS is held low.
Serial Clock (SK)
This is an input pin to the device and is generated by the master that
is controlling the device. This is a clock signal that synchronizes the
communication between a master and the device. All input informa-
tion (DI) to the device is latched on the rising edge of this clock input,
while output data (DO) from the device is driven from the rising edge
of this clock input. This pin is gated by CS signal.
Serial Input (DI)
This is an input pin to the device and is generated by the master
that is controlling the device. The master transfers Input informa-
tion (Start bit, Opcode bits, Array addresses and Data) serially via
this pin into the device. This Input information is latched on the
rising edge of the SCK. This pin is gated by CS signal.
Serial Output (DO)
This is an output pin from the device and is used to transfer Output
data via this pin to the controlling master. Output data is serially
shifted out on this pin from the rising edge of the SCK. This pin is
active only when the device is selected.
Microwire Interface
A typical communication on the Microwire bus is made through the
CS, SK, DI and DO signals. To facilitate various operations on the
Memory array, a set of 7 instructions are implemented on FM93C46.
The format of each instruction is listed under Table 1.
Instruction
Each of the 7 instructions is explained under individual instruction
descriptions.
Start bit
This is a 1-bit field and is the first bit that is clocked into the device
when a Microwire cycle starts. This bit has to be 1 for a valid cycle
to begin. Any number of preceding 0 can be clocked into the
device before clocking a 1.
Opcode
This is a 2-bit field and should immediately follow the start bit.
These two bits (along with 2 MSB of address field) select a
particular instruction to be executed.
Address Field
This is a 6-bit field and should immediately follow the Opcode bits.
In FM93C46, all 6 bits are used for address decoding during
READ, WRITE and ERASE instructions. During all other instruc-
tions, the MSB 2 bits are used to decode instruction (along with
Opcode bits).
Data Field
This is a 16-bit field and should immediately follow the Address
bits. Only the WRITE and WRALL instructions require this field.
D15 (MSB) is clocked first and D0 (LSB) is clocked last (both
during writes as well as reads).
Table 1. Instruction set
Instruction Start Bit Opcode Field Address Field Data Field
READ 1 10 A5 A4 A3 A2 A1 A0
WEN 1 00 11XXXX
WRITE 1 01 A5 A4 A3 A2 A1 A0 D15-D0
WRALL 1 00 0 1 XXXX D15-D0
WDS 1 00 00XXXX
ERASE 1 11 A5 A4 A3 A2 A1 A0
ERAL 1 00 1 0 XXXX
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FM93C46 Rev. D.1
FM93C46 1024-Bit Serial CMOS EEPROM
(MICROWIRE
TM
Synchronous Bus)
Functional Description
A typical Microwire cycle starts by first selecting the device
(bringing the CS signal high). Once the device is selected, a valid
Start bit (1) should be issued to properly recognize the cycle.
Following this, the 2-bit opcode of appropriate instruction should
be issued. After the opcode bits, the 6-bit address information
should be issued. For certain instructions, some of these 6 bits are
dont care values (can be 0 or 1), but they should still be issued.
Following the address information, depending on the instruction
(WRITE and WRALL), 16-Bit data is issued. Otherwise, depend-
ing on the instruction (READ), the device starts to drive the output
data on the DO line. Other instructions perform certain control
functions and do not deal with data bits. The Microwire cycle ends
when the CS signal is brought low. However during certain
instructions, falling edge of the CS signal initiates an internal cycle
(Programming), and the device remains busy till the completion of
the internal cycle. Each of the 7 instructions is explained in detail
in the following sections.
1) Read (READ)
READ instruction allows data to be read from a selected location
in the memory array. Input information (Start bit, Opcode and
Address) for this instruction should be issued as listed under
Table1. Upon receiving a valid input information, decoding of the
opcode and the address is made, followed by data transfer from
the selected memory location into a 16-bit serial-out shift register.
This 16-bit data is then shifted out on the DO pin. D15 bit (MSB)
is shifted out first and D0 bit (LSB) is shifted out last. A dummy-bit
(logical 0) precedes this 16-bit data output string. Output data
changes are initiated on the rising edge of the SK clock. After
reading the 16-bit data, the CS signal can be brought low to end
the Read cycle. Refer
Read cycle diagram
.
2) Write Enable (WEN)
When V
CC
is applied to the part, it powers up in the Write Disable
(WDS) state. Therefore, all programming operations must be
preceded by a Write Enable (WEN) instruction. Once a Write
Enable instruction is executed, programming remains enabled
until a Write Disable (WDS) instruction is executed or V
CC
is
completely removed from the part. Input information (Start bit,
Opcode and Address) for this WEN instruction should be issued
as listed under Table1. The device becomes write-enabled at the
end of this cycle when the CS signal is brought low. Execution of
a READ instruction is independent of WEN instruction. Refer
Write Enable cycle diagram.
3) Write (WRITE)
WRITE instruction allows write operation to a specified location in
the memory with a specified data. This instruction is valid only when
device is write-enabled (Refer WEN instruction).
Input information (Start bit, Opcode, Address and Data) for this
WRITE instruction should be issued as listed under Table1. After
inputting the last bit of data (D0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
WP
time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
The status of the internal programming cycle can be polled at any
time by bringing the CS signal high again, after t
CS
interval. When
CS signal is high, the DO pin indicates the READY/BUSY status
of the chip. DO = logical 0 indicates that the programming is still
in progress. DO = logical 1 indicates that the programming is
finished and the device is ready for another instruction. It is not
required to provide the SK clock during this status polling. While
the device is busy, it is recommended that no new instruction be
issued. Refer
Write cycle diagram.
It is also recommended to follow this instruction (after the device
becomes READY) with a Write Disable (WDS) instruction to
safeguard data against corruption due to spurious noise, inadvert-
ent writes etc.
4) Write All (WRALL)
Write all (WRALL) instruction is similar to the Write instruction
except that WRALL instruction will simultaneously program all
memory locations with the data pattern specified in the instruction.
This instruction is valid only when device is write-enabled (Refer
WEN instruction).
Input information (Start bit, Opcode, Address and Data) for this
WRALL instruction should be issued as listed under Table1. After
inputting the last bit of data (D0 bit), CS signal must be brought low
before the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. It takes t
WP
time
(Refer appropriate DC and AC Electrical Characteristics table) for
the internal programming cycle to finish. During this time, the
device remains busy and is not ready for another instruction.
Status of the internal programming can be polled as described
under WRITE instruction description. While the device is busy, it
is recommended that no new instruction be issued. Refer
Write All
cycle diagram.
5) Write Disable (WDS)
Write Disable (WDS) instruction disables all programming opera-
tions and should follow all programming operations. Executing this
instruction after a valid write instruction would protect against
accidental data disturb due to spurious noise, glitches, inadvertent
writes etc. Input information (Start bit, Opcode and Address) for this
WDS instruction should be issued as listed under Table1. The
device becomes write-disabled at the end of this cycle when the CS
signal is brought low.
Execution of a READ instruction is indepen-
dent of WDS instruction. Refer
Write Disable cycle diagram.
6) Erase (ERASE)
The ERASE instruction will program all bits in the specified
location to a logical 1 state. Input information (Start bit, Opcode
and Address) for this WDS instruction should be issued as listed
under Table1. After inputting the last bit of data (A0 bit), CS signal
must be brought low before the next rising edge of the SK clock.
This falling edge of the CS initiates the self-timed programming
cycle. It takes t
WP
time (Refer appropriate DC and AC Electrical
Characteristics table) for the internal programming cycle to finish.
During this time, the device remains busy and is not ready for
another instruction. Status of the internal programming can be
polled as described under WRITE instruction description. While
the device is busy, it is recommended that no new instruction be
issued. Refer
Erase cycle diagram.
7) Erase All (ERAL)

FM93C46M8

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
EEPROM
Lifecycle:
New from this manufacturer.
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