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NLASB3157MTR2G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 13
1 Publication Order Number:
NLASB3157/D
NLASB3157
SPDT, 3 W R
ON
Switch
The NLASB3157 is an advanced CMOS analog switch fabricated
with silicon gate CMOS technology. It achieves very low
propagation delay and RDS
ON
resistances while maintaining CMOS
low power dissipation. Analog and digital voltages that may vary
across the full power−supply range (from V
CC
to GND). This device
is a drop in replacement for the NC7SB3157.
The select pin has overvoltage protection that allows voltages
above V
CC,
up to 7.0 V to be present on the pin without damage or
disruption of operation of the part, regardless of the operating
voltage.
Features
• High Speed: t
PD
= 1.0 ns (Typ) at V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 2.0 mA (Max) at T
A
= 25°C
• Standard CMOS Logic Levels
• High Bandwidth, Improved Linearity
• Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV
• May be used for Clock Switching, Data Multiplexing, etc.
• R
ON
Typical = 3 W @ V
CC
= 4.5 V
• Break Before Make Circuitry, Prevents Inadvertent Shorts
• 2 Devices can Switch Balanced Signal Pairs,
e.g. LVDS u 200 Mb/s
• Latchup Performance Exceeds 300 mA
• Pin for Pin Drop in for NC7SB3157
• Tiny SC88 and WDFN6 Packages
• ESD Performance:
♦ Human Body Model; u 2000 V;
♦ Machine Model; u 200 V
• NLVASB3157 Features Extended Automotive Temperature Range;
−55°C to +125°C (See Appendix A)
• Pb−Free Packages are Available
SC−88
DF SUFFIX
CASE 419B
1
6
Device Package Shipping
†
ORDERING INFORMATION
NLASB3157DFT2 SC−88 3000 / Tape &
Reel
http://onsemi.com
MARKING
DIAGRAMS
AF MG
G
AF, F = Specific Device Code
M = Date Code*
G = Pb−Free Package
L
H
FUNCTION TABLE
Select Input Function
B0 Connected to A
B1 Connected to A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NLASB3157DFT2G SC−88
(Pb−Free)
3000 / Tape &
Reel
WDFN6
MT SUFFIX
CASE 506AS
F M
NLASB3157MTR2G WDFN6
(Pb−Free)
3000 / Tape &
Reel
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
NLVASB3157DFT2 SC−88 3000 / Tape &
Reel
NLVASB3157DFT2G SC−88
(Pb−Free)
3000 / Tape &
Reel
NLASB3157
http://onsemi.com
2
SC−88
WDFN6
(Top View)
(Top View)
B
1
GND
B
0
43
52
61
V
CC
Select
A
Figure 1. Pin Assignment & Logic Diagram
Select
B
1
GND
A
B
0
1
2
3
6
4
V
CC
5
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage V
CC
−0.5 to +7.0 V
DC Switch Voltage (Note 1) V
IS
−0.5 to V
CC
+ 0.5 V
DC Input Voltage (Note 1) V
IN
−0.5 to + 7.0 V
DC Input Diode Current @ V
IN
t 0 V I
IK
−50 mA
DC Output Current I
OUT
128 mA
DC V
CC
or Ground Current I
CC
/I
GND
+100 mA
Storage Temperature Range T
stg
−65 to +150 °C
Junction Temperature Under Bias T
J
150 °C
Junction Lead Temperature (Soldering, 10 Seconds) T
L
260 °C
Power Dissipation @ +85°C P
D
180 mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed.
RECOMMENDED OPERATING CONDITIONS (Note 2)
Characteristic Symbol Min Max Unit
Supply Voltage Operating V
CC
1.65 5.5 V
Select Input Voltage V
IN
0 5.5 V
Switch Input Voltage V
IS
0 V
CC
V
Output Voltage V
OUT
0 V
CC
V
Operating Temperature T
A
−55 +125 °C
Input Rise and Fall Time
Control Input V
CC
= 2.3 V−3.6 V
Control Input V
CC
= 4.5 V−5.5 V
t
r
, t
f
0
0
10
5.0
ns/V
Thermal Resistance q
JA
− 350 °C/W
2. Select input must be held HIGH or LOW, it must not float.
NLASB3157
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS − NLASB3157
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= +255C T
A
= −405C to +855C
Unit
Min Typ Max Min Max
V
IH
HIGH Level
Input Voltage
1.65−1.95
2.3−5.5
0.75 V
CC
0.7 V
CC
V
V
IL
LOW Level
Input Voltage
1.65−1.95
2.3−5.5
0.25 V
CC
0.3 V
CC
V
I
IN
Input Leakage Current 0 v V
IN
v 5.5 V 0−5.5 "0.05 "0.1 "1 mA
I
OFF
OFF State Leakage
Current
0 v A, B v V
CC
1.65−5.5 "0.05 "0.1 "1 mA
R
ON
Switch On Resistance
(Note 3)
V
IN
= 0 V, I
O
= 30 mA
V
IN
= 2.4 V, I
O
= −30 mA
V
IN
= 4.5 V, I
O
= −30 mA
4.5 3.0
5.0
7.0
7.0
12
15
W
V
IN
= 0 V, I
O
= 24 mA
V
IN
= 3 V, I
O
= −24 mA
3.0 4.0
10
9.0
20
W
V
IN
= 0 V, I
O
= 8 mA
V
IN
= 2.3 V, I
O
= −8 mA
2.3 5.0
13
12
30
W
V
IN
= 0 V, I
O
= 4 mA
V
IN
= 1.65 V, I
O
= −4 mA
1.65 6.5
17
20
50
W
I
CC
Quiescent Supply
Current
All Channels ON or
OFF
V
IN
= V
CC
or GND
I
OUT
= 0
5.5 1.0 10 mA
Analog Signal Range V
CC
0 V
CC
0 V
CC
V
R
RANGE
On Resistance
Over Signal Range
(Note 3) (Note 7)
I
A
= −30 mA, 0 v V
Bn
v V
CC
I
A
= −24 mA, 0 v V
Bn
v V
CC
I
A
= −8 mA, 0 v V
Bn
v V
CC
I
A
= −4 mA, 0 v V
Bn
v V
CC
4.5
3.0
2.3
1.65
25
50
100
300
W
DR
ON
On Resistance Match
Between Channels
(Note 3) (Note 4)
(Note 5)
I
A
= −30 mA, V
Bn
= 3.15
I
A
= −24 mA, V
Bn
= 2.1
I
A
= −8 mA, V
Bn
= 1.6
I
A
= −4 mA, V
Bn
= 1.15
4.5
3.0
2.3
1.65
0.15
0.2
0.5
0.5
W
R
flat
On Resistance
Flatness (Note 3)
(Note 4) (Note 6)
I
A
= −30 mA, 0 v V
Bn
v V
CC
I
A
= −24 mA, 0 v V
Bn
v V
CC
I
A
= −8 mA, 0 v V
Bn
v V
CC
I
A
= −4 mA, 0 v V
Bn
v V
CC
5.0
3.3
2.5
1.8
6.0
12
28
125
W
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5. DR
ON
= R
ON
max − R
ON
min measured at identical V
CC
, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.
P1-P3P4-P6P7-P9P10-P10

NLASB3157MTR2G

Mfr. #:
Buy NLASB3157MTR2G
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs LOG CMOS 2:1 MLTPLXR
Lifecycle:
New from this manufacturer.
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