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AFT26H200W03SR6

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AFT26H200W03SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N−Channel Enhancement−Mode Lateral MOSFET
This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2496 to 2690 MHz.
• Typical Doherty Single−Carrier W−CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 500 mA, V
GSB
= 0.3 Vdc, P
out
= 45 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
h
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz 14.1 45.2 7.8 −31.1
2590 MHz 14.2 44.0 7.8 −35.6
2690 MHz 13.9 44.1 7.6 −37.5
Features
• Advanced High Performance In−Package Doherty
• Designed for Wide Instantaneous Bandwidth Applications
• Greater Negative Gate−Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13−inch Reel.
Document Number: AFT26H200W03S
Rev. 0, 8/2013
Freescale Semiconductor
Technical Data
2496−2690 MHz, 45 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT26H200W03SR6
Figure 1. Pin Connections
NI−1230S−4S
1. Pin connections 1 and 2 are DC coupled
and RF independent.
(Top View)
RF
outA
/V
DSA
31
42
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
Carrier
Peaking
(1)
© Freescale Semiconductor, Inc., 2013. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT26H200W03SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
−0.5, +65 Vdc
Gate−Source Voltage V
GS
−6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
−65 to +150 °C
Case Operating Temperature Range T
C
−40 to +125 °C
Operating Junction Temperature Range
(1,2)
T
J
−40 to +225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 45 W−CDMA, 28 Vdc, I
DQA
= 500 mA, V
GSB
= 0.3 Vdc, 2590 MHz
R
θ
JC
0.46 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22−A114) 2
Machine Model (per EIA/JESD22−A115) B
Charge Device Model (per JESD22−C101) III
Table 4. Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(5)
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(5)
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 5 μAdc
Gate−Source Leakage Current
(6)
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 μAdc
On Characteristics − Side A
(4,6)
(Carrier)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100 μAdc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 500 mAdc, Measured in Functional Test)
V
GS(Q)
1.4 1.8 2.2 Vdc
Drain−Source On−Voltage
(V
GS
= 6 Vdc, I
D
= 1.0 Adc)
V
DS(on)
0.1 0.15 0.3 Vdc
On Characteristics − Side B
(4,6)
(Peaking)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 180 μAdc)
V
GS(th)
0.8 1.2 1.6 Vdc
Drain−Source On−Voltage
(V
GS
= 6 Vdc, I
D
= 1.8 Adc)
V
DS(on)
0.1 0.15 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1955.
4. V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
5. Side A and Side B are tied together for these measurements.
6. Each side of device measure separately.
AFT26H200W03SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 0.3 Vdc, P
out
= 45 W Avg.,
f = 2496 MHz, Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain G
ps
13.0 14.1 16.0 dB
Drain Efficiency η
D
42.0 45.2 — %
Output Peak−to−Average Ratio @ 0.01% Probability on CCDF PAR 7.5 7.8 — dB
Adjacent Channel Power Ratio ACPR — −31.1 −28.0 dBc
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
DQA
= 500 mA, V
GSB
= 0.3 Vdc, f = 2590 MHz, 10 μsec Pulse Width,
10% Duty Cycle, <100 ns Input Rise Time
VSWR 10:1 at 30 Vdc, 280 W Pulse Output Power
(3 dB Input Overdrive from 250 W Pulse Rated Power)
No Device Degradation
Typical Performances
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 0.3 Vdc,
2496−2690 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 200 — W
P
out
@ 3 dB Compression Point
(4)
P3dB — 280 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496−2690 MHz frequency range)
Φ — −13 — °
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 220 — MHz
Gain Flatness in 194 MHz Bandwidth @ P
out
= 45 W Avg. G
F
— 0.3 — dB
Gain Variation over Temperature
(−30°C to +85°C)
ΔG — 0.019 — dB/°C
Output Power Variation over Temperature
(−30°C to +85°C)
ΔP1dB — 0.0377 — dB/°C
1. V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
2. Part internally matched both on input and output.
3. Measurements made with device in an asymmetrical Doherty configuration.
4. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W−CDMA single−carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
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AFT26H200W03SR6

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Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
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