Characteristics STPS20S100C
2/9 Doc ID 11281 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ T
j(diode 1)
= P
(diode 1)
x R
th(j-c)(Per diode)
+ P
(diode 2)
x R
th(c)
To evaluate the conduction losses use the following equation: P = 0.62 x I
F(AV)
+ 0.009 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward
current δ = 0.5
TO-220AB / I
2
PA K T
c
= 150 °C
Per diode
Per device
10
20
A
TO-220FPAB T
c
= 140 °C
Per diode
Per device
10
20
I
FSM
Surge non repetitive forward current t
p
= 10ms sinusoidal 180 A
P
ARM
Repetitive peak avalanche power t
p
= 1µs T
j
= 25 °C 7200 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AB / I
2
PA K
Per diode 2.2
°C/WTot al 1 . 3
R
th(c)
Coupling 0.3
R
th(j-c)
Junction to case TO-220FPAB
Per diode 4.5
°C/WTot al 3 . 5
R
th(c)
Coupling 2.5
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
3.5 µA
T
j
= 125 °C 1.3 4.5 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
0.73
V
T
j
= 125 °C 0.57 0.61
T
j
= 25 °C
I
F
= 10 A
0.85
T
j
= 125 °C 0.66 0.71
T
j
= 25 °C
I
F
= 20 A
0.94
T
j
= 125 °C 0.74 0.80
dPtot
dTj
<
1
Rth(j-a)
