Characteristics STPS20S100C
4/9 Doc ID 11281 Rev 2
Figure 11. Forward voltage drop versus forward current (per diode)
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
(TO-220FPAB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220FPAB
Figure 9. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
I (mA)
R
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
10 20 30 40 50 60 70 80 90 100
T =125°C
j
T =150°C
j
T =100°C
j
T =50°C
j
T =25°C
j
T =75°C
j
V (V)
R
C(pF)
10
100
1000
1 10 100
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
I (A)
FM
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V (V)
FM
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
