1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 5.5 A
I
D
Drain current (continuous) at T
C
= 100 °C 3.5 A
I
DM
Drain current (pulsed) 22 A
P
TOT
Total dissipation at T
C
= 25 °C 60 W
dv/dt
Peak diode recovery voltage slope 15 V/ns
dv/dt
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150
°C
T
j
Max. operating junction temperature 150
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 5.5 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 80% V
(BR)DSS.
(3)
V
DS
≤ 520 V.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max. 2.08 °C/W
R
thj-pcb
Thermal resistance junction-pcb max. 50 °C/W
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 oz Cu board.
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T
jmax
)
1.0
A
E
AS
Single pulse avalanche energy (starting T
j
= 25 °C,
I
D
= I
AR
, V
DD
= 50 V)
105 mJ
