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STD9HN65M2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics
DocID027601 Rev 2
7/16
Figure 8: Static drain-source on-resistance
Figure 9: Normalized on-resistance vs.
temperature
Figure 10: Gate charge vs. gate-source
voltage
Figure 11: Capacitance variations
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
Test circuits
STD9HN65M2
8/16
DocID027601 Rev 2
3 Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
AM01469v1
V
DD
47 k Ω
1 kΩ
47 k Ω
2.7 k Ω
1 kΩ
12 V
V
i
≤ V
GS
2200 μ F
P
W
I
G
= CONST
100 Ω
100 nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
A
A
B
B
R
G
G
FAST
DIODE
D
S
L=100 µH
µF
3.3
1000
µF
V
DD
Ω
D.U.T.
V
(BR)DSS
V
DD
V
DD
V
D
I
DM
I
D
AM01472v1
AM01473v1
0
V
GS
90%
V
DS
t
on
90%
10%
90%
10%
t
d(on)
t
r
t
t
d(off)
t
f
10%
0
off
Package information
DocID027601 Rev 2
9/16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STD9HN65M2

Mfr. #:
Buy STD9HN65M2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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