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PHD20N06T,118

P1-P3P4-P6P7-P9P10-P12P13-P13
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PHD20N06T
N-channel TrenchMOS standard level FET
Rev. 02 — 1 December 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC convertors
General purpose switching
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - - 55 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
and 3
--18A
P
tot
total power
dissipation
T
mb
=25°C;
see Figure 2
--51W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
=44V; T
j
=25°C;
see Figure 13
-6-nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=10A;
T
j
=175°C;
see Figure 11 and 12
- - 154 mΩ
V
GS
=10V; I
D
=10A;
T
j
=25°C;
see Figure 11 and 12
- 6577mΩ
PHD20N06T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 1 December 2009 2 of 12
NXP Semiconductors
PHD20N06T
N-channel TrenchMOS standard level FET
2. Pinning information
3. Ordering information
4. Limiting values
[1] Peak drain current is limited by chip, not package.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT428 (DPAK)
2D drain
3S source
mb D mounting base; connected to
drain
3
2
mb
1
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PHD20N06T DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - 55 V
V
DGR
drain-gate voltage R
GS
=20kΩ -55V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1 -13A
V
GS
=10V; T
mb
=25°C; see Figure 1 and 3 -18A
I
DM
peak drain current t
p
≤ 10 µs; pulsed; T
mb
=25°C; see Figure 3
[1]
-73A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -51W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 18 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 73 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
V
GS
=10V; T
j
=25°C; I
D
=6A; R
GS
=50Ω;
V
sup
≤ 55 V; unclamped inductive load
-36mJ
P1-P3P4-P6P7-P9P10-P12P13-P13

PHD20N06T,118

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Manufacturer:
Nexperia
Description:
MOSFET TAPE13 MOSFET
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