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PHD20N06T,118

P1-P3P4-P6P7-P9P10-P12P13-P13
PHD20N06T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 1 December 2009 3 of 12
NXP Semiconductors
PHD20N06T
N-channel TrenchMOS standard level FET
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
T
mb
(°C)
0 20015050 100
03aa24
40
80
120
I
der
(%)
0
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
003aaa043
10
−1
1
10
10
2
10
3
1
10
10
2
VDS
(V)
I
D
D.C.
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
t
p
t
p
T
P
t
T
δ
=
(A)
PHD20N06T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 1 December 2009 4 of 12
NXP Semiconductors
PHD20N06T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from
junction to mounting
base
see Figure 4 --2.9K/W
R
th(j-a)
thermal resistance from
junction to ambient
minimum footprint; FR4 board - 71.4 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaa053
Single pulse
0.2
0.1
0.05
0.02
10
−2
10
−1
1
10
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
t
p
t
p
T
P
t
T
δ =
PHD20N06T_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 1 December 2009 5 of 12
NXP Semiconductors
PHD20N06T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=-55°C 50 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 55 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 10
--4.4V
I
D
=1mA; V
DS
= V
GS
; T
j
=175°C;
see Figure 10
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 10
234V
I
DSS
drain leakage current V
DS
=55V; V
GS
=0V; T
j
= 25 °C - 0.05 10 µA
V
DS
=55V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=10A; T
j
= 175 °C;
see Figure 11 and 12
--154mΩ
V
GS
=10V; I
D
=10A; T
j
=25°C;
see Figure 11
and 12
-6577mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=44V; V
GS
=10V;
T
j
=25°C; see Figure 13
-11-nC
Q
GS
gate-source charge - 3 - nC
Q
GD
gate-drain charge - 6 - nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 14
- 316 422 pF
C
oss
output capacitance - 92 110 pF
C
rss
reverse transfer
capacitance
-6487pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-10-ns
t
r
rise time - 50 - ns
t
d(off)
turn-off delay time - 70 - ns
t
f
fall time - 40 - ns
L
D
internal drain
inductance
measured from drain lead from package to
centre of die; T
j
=25°C
-2.5-nH
L
S
internal source
inductance
measured from source lead from package
to source bond pad; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=10A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=-10V;
V
DS
=30V; T
j
=25°C
-32-ns
Q
r
recovered charge - 120 - nC
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PHD20N06T,118

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Manufacturer:
Nexperia
Description:
MOSFET TAPE13 MOSFET
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