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STTA806DI

P1-P3P4-P6P7-P9
1/9
May 2002 - Ed: 4C
■
SPECIFIC TO “FREEWHEEL MODE” OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
■
ULTRA-FAST AND SOFT RECOVERY
■
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
■ HIGH FREQUENCY OPERATIONS
■ INSULATED PACKAGE : TO-220AC
Electrical insulation : 2500V
RMS
Capacitance < 7 pF
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all “freewheel mode” operations
and is particularly suitable and efficient in motor
control freewheel applications and in booster
diode applications in power factor control
circuitries.
Packaged either in TO-220AC, insulated
TO-220AC or in D
2
PAK, these 600V devices are
particularly intended for use on 240V domestic
mains.
DESCRIPTION
I
F(AV)
8A
V
RRM
600V
t
rr
(typ) 25ns
V
F
(max) 1.5V
MAIN PRODUCTS CHARACTERISTICS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
V
RSM
Non repetitive peak reverse voltage 600 V
I
F(RMS)
RMS forward current TO-220AC / D
2
PAK 30 A
TO-220AC ins. 20 A
I
FRM
Repetitive peak forward current tp=5ms F=5kHz square 110 A
I
FSM
Surge non repetitive forward current tp=10 ms sinusoidal 90 A
T
j
Maximum operating junction temperature 150 °C
T
stg
Storage temperature range -65 to 150 °C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values)
STTA806D/DI/G
®
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
K
K
A
TO-220AC
STTA806D
K
A
Insulated
TO-220AC
STTA806DI
K
A
NC
D
2
PAK
STTA806G
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STTA806D/DI/G
2/9
Symbol Parameter Test conditions Min Typ Max Unit
V
F
* Forward voltage drop I
F
=8A Tj = 25°C
Tj = 125°C
1.25
1.75
1.5
V
V
I
R
** Reverse leakage current V
R
=0.8 x
V
RRM
Tj = 25°C
Tj = 125°C
1.5
100
4
µA
mA
V
to
Threshold voltage Ip < 3.I
AV
Tj = 125°C 1.15 V
rd Dynamic resistance 43 mΩ
Test pulse : * tp = 380 µs, δ <2%
** tp = 5 ms, δ <2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Value Unit
R
th(j-c)
Junction to case thermal
resistance
TO-220AC / D
2
PAK
TO-220AC ins.
2.2
3.3
°C/W
P
1
Conduction power dissipation
I
F(AV)
=8A δ=0.5
TO-220AC / D
2
PAK
TO-220AC ins.
Tc= 118°C
Tc= 102°C
14.5 W
P
max
Total power dissipation
Pmax=P1+P3
(P3 = 10% P1)
TO-220AC /D
2
PAK
TO-220AC ins.
Tc= 115°C
Tc= 97°C
16 W
THERMAL AND POWER DATA
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
Reverse recovery
time
Tj = 25°C
I
F
= 0.5 A I
R
= 1A Irr = 0.25A
I
F
=1A dI
F
/dt =-50A/µsV
R
= 30V
25
52
ns
I
RM
Maximum reverse
recovery current
Tj = 125°C VR = 400V I
F
=8A
dI
F
/dt = -64 A/µs
dI
F
/dt = -500 A/µs
14
5.5
A
S factor Softness factor Tj = 125°C V
R
= 400V I
F
=8A
dI
F
/dt = -500 A/µs
0.47
-
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol Parameter Test conditions Min Typ Max Unit
t
fr
Forward recovery
time
Tj = 25°C
I
F
=8A,dI
F
/dt=64A/µs
measured at, 1.1
×
V
F
max
500
ns
V
Fp
Peak forward voltage Tj = 25°C
I
F
= 8A, dI
F
/dt=64A/µs
10
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P=V
to
xI
F(AV)
+rdxI
F
2
(RMS)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
STTA806D/DI/G
3/9
P1(W)
012345678
0
2
4
6
8
10
12
14
16
18
=0.2
=0.5
=1
IF(av)(A)
T
=tp/T
tp
=0.1
Fig. 1: Conduction losses versus average current.
0.1 1 10 100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
MAXIMUM VALUES
IFM(A)
Tj=125 C
o
VFM(V)
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0 100 200 300 400 500 600 700 800 9001000
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
27.5
30.0
32.5
IRM(A)
VR=400V
IF=8A
IF=4A
90% CONFIDENCE Tj=125 C
o
IF=16A
dIF/dt(A/ s)
Fig. 4: Peak reverse recovery current versus
dI
F
/dt.
0 100 200 300 400 500 600 700 800 9001000
0
20
40
60
80
100
120
140
160
180
200
trr(ns)
VR=400V
90% CONFIDENCE Tj=125 C
o
dIF/dt(A/ s)
IF=8A
IF=4A
IF=16A
Fig. 5: Reverse recovery time versus dI
F
/dt.
0 100 200 300 400 500 600 700 800 900 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Sfactor
VR=400V
IF<2xIF(av)
Typical values Tj=125 C
o
dIF/dt(A/ s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt.
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9

STTA806DI

Mfr. #:
Buy STTA806DI
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 600V 8A TO220AC
Lifecycle:
New from this manufacturer.
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