STTA806DI

P1-P3 P4-P6 P7-P9

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STTA806D/DI/G

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0 25 50 75 100 125 150

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

IRM

Sfactor

Tj(oC)

Fig. 7: Relative variation of dynamic parameters

versus junction temperature (reference Tj=125°C).

0 20 40 60 80 100 120 140 160

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

VFP(V)

IF=IF(av)

90% CONFIDENCE Tj=125 C

o

dIF/dt(A/ s)

Fig. 8: Transient peak forward voltage versus

dI

F

/dt.

0 20 40 60 80 100 120 140 160

50

100

150

200

250

300

350

400

450

500

tfr(ns)

0

VFr=1.1*VF max.

IF=IF(av)

90% CONFIDENCE Tj=125 C

o

dIF/dt(A/ s)

Fig. 9: Forward recovery time versus dI

F

/dt.

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STTA806D/DI/G

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Fig. A : “FREEWHEEL” MODE.

TOTAL LOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

SWITCHING

LOSSES

in the diode

SWITCHING

LOSSES

in the tansistor

due to the diode

CONDUCTION

LOSSES

in the diode

REVERSE

LOSSES

in the diode

The TURBOSWITCH is especially designed to

provide the lowest overall power losses in any

“FREEWHEEL Mode” application (Fig.A)

considering both the diode and the companion

transistor, thus optimizing the overall performance

in the end application.

The way of calculating the power losses is given

below:

APPLICATION DATA

DIODE:

TURBOSWITCH

IL

LOAD

TRANSISTOR

SWITCHING

t

T

F=1/T =t/T

V

R

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STTA806D/DI/G

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Turn-on losses :

(in the transistor, due to the diode)

P5 =

VI SF

xdI dt

R

RM

F

××+××

2

32

6

()

+

× ××+×

VI IS F

xdI dt

RRML

F

()2

2

Turn-off losses (in the diode) :

P3 =

VI SF

xdI dt

R

RM

F

×××

2

6

P3 and P5 are suitable for power MOSFET and

IGBT

I

I

F

Rd

I

R

V

R

V

tO

V

F

V

Fig. B: STATIC CHARACTERISTICS

V

I

IL

t

TRANSISTOR

dI /dt

F

dI /dt

R

tbta

I

RM

VR

DIODE

I

V

t

trr = ta + tb S = tb / ta

Fig. C: TURN-OFF CHARACTERISTICS

I

F

V

F

V

Fp

1.1V

F

V

F

F

dI /dt

0

0t

t

I

Fmax

tfr

Fig. D: TURN-ON CHARACTERISTICS

Conduction losses :

P1=V

t0

.I

F(AV)

+R

d

.I

F

2

(RMS)

Reverse losses :

P2=V

R

.I

R

.(1-δ)

Turn-on losses :

P4 = 0.4 (V

FP

-V

F

).I

Fmax

.t

fr

.F

APPLICATION DATA (Cont’d)

Obsolete Product(s) - Obsolete Product(s)

P1-P3 P4-P6 P7-P9

STTA806DI

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

DIODE GEN PURP 600V 8A TO220AC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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