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NDS9953A

P1-P3P4-P6P7-P7
NDS9953A.SAM
-5-4-3-2-10
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-4.0
-6.0
-5.0
-4.5
-7.0
-3.5
-8.0
-3.0
-5.5
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I = -2.9A
D
R , NORMALIZED
DS(ON)
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250µA
D
V = V
DS
GS
J
V , NORMALIZED
th
-15-12-9-6-30
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = -3.5V
GS
-10
-6.0
-4.0
-8.0
-7.0
-5.0
-4.5
-5.5
-15-12-9-6-30
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C
-55°C
D
V = -10V
GS
R , NORMALIZED
DS(on)
Typical Electrical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with
Temperature.
-6-5-4-3-2-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = -10V
DS
GS
D
T = -55°C
J
25°C
125°C
NDS9953A.SAM
-50 -25 0 25 50 75 100 125 150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = -250µA
D
BV , NORMALIZED
DSS
J
0.2 0.4 0.6 0.8 1 1.2 1.4
0.001
0.01
0.1
0.5
1
5
10
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
0 2 4 6 8 10 12
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -2.9A
D
V = -10V
DS
-20V
-15V
0.1 0.2 0.5 1 2 5 10 30
50
100
200
300
500
800
1000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristic.
Typical Electrical Characteristics (continued)
-10-8-6-4-20
0
1
2
3
4
5
6
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
T = -55°C
J
25°C
125°C
V = -15V
DS
D
FS
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9953A.SAM
Typical Thermal Characteristics
0 0.2 0.4 0.6 0.8 1
0.5
1
1.5
2
2.5
2oz COPPER MOUNTING PAD AREA (in )
STEADY-STATE POWER DISSIPATION (W)
2
1c
1b
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
o
Power for Single Operation
Total Power for Dual Operation
1a
Figure 12. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
0 0.1 0.2 0.3 0.4 0.5
1
2
3
4
5
2oz COPPER MOUNTING PAD AREA (in )
I , STEADY-STATE DRAIN CURRENT (A)
2
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -10V
A
o
GS
D
Figure 13. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
0.1 0.2 0.5 1 2 5 10 30 50
0.01
0.03
0.1
0.3
1
3
10
30
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
RDS(ON) LIMIT
1s
100ms
10s
DC
10ms
1ms
100us
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
GS
A
θ
JA
Figure 14. Maximum Safe Operating Area.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = See Note 1c
θ
JA
θ
JA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
P1-P3P4-P6P7-P7

NDS9953A

Mfr. #:
Buy NDS9953A
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SO-8 P-CH ENHANCE
Lifecycle:
New from this manufacturer.
Delivery:
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