SI8499DB-T2-E1 Datasheet SI8499DB-T2-E1 | P1-P3

Vishay Siliconix

Si8499DB

Document Number: 65906

S10-0543-Rev. A, 08-Mar-10

www.vishay.com

1

P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Ultra-small 1.5 mm x 1 mm Maximum Outline

• Ultra-thin 0.59 Maximum Height

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Low On-Resistance Load Switch, Charger Switch and

Battery Switch for Portable Devices

- Low Power Consumption

- Increased Battery Life

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

e

Q

g

(Typ.)

- 20

0.032 at V

GS

= - 4.5 V

- 16

14.5 nC

0.046 at V

GS

= - 2.5 V

- 14.3

0.065 at V

GS

= - 2.0 V

- 12

0.120 at V

GS

= - 1.8 V

- 2.5

MICRO FOOT

Device Marking: 8499

xxx = Date/Lot Traceability Code

Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free)

DD

SS

SG

1

2

63

5

4

Bump Side View

8499

XXX

Backside View

S

G

D

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.

d. Case is defined as the top surface of the package.

e. Based on T

C

= 25 °C.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 20

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 16

A

T

C

= 70 °C

- 13.7

T

A

= 25 °C

- 7.8

a, b

T

A

= 70 °C

- 6.3

a, b

Pulsed Drain Current

I

DM

- 20

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 10.8

T

A

= 25 °C

- 2.3

a, b

Maximum Power Dissipation

T

C

= 25 °C

P

D

13

W

T

C

= 70 °C

8.4

T

A

= 25 °C

2.77

a, b

T

A

= 70 °C

1.77

a, b

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Package Reflow Conditions

c

IR/Convection 260

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Document Number: 65906

S10-0543-Rev. A, 08-Mar-10

Vishay Siliconix

Si8499DB

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 85 °C/W.

c. Case is defined as top surface of the package.

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, b

R

thJA

37 45

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

79.5

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 20 V

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= - 250 µA

- 20

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

2.2

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.5 - 1.3 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 20 V, V

GS

= 0 V

- 1

µA

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 70 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 4.5 V

- 5 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 1.5 A

0.026 0.032

Ω

V

GS

= - 2.5 V, I

D

= - 1.5 A

0.036 0.046

V

GS

= - 2.0 V, I

D

= - 1 A

0.048 0.065

V

GS

= - 1.8 V, I

D

= - 0.5 A

0.060 0.120

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 1.5 A

10 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

1300

pFOutput Capacitance

C

oss

250

Reverse Transfer Capacitance

C

rss

200

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 5 V, I

D

= - 1.5 A

20 30

nC

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 1.5 A

14.5 22

Gate-Source Charge

Q

gs

2.0

Gate-Drain Charge

Q

gd

4.1

Gate Resistance

R

g

V

GS

= - 0.1 V, f = 1 MHz

7 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 10 V, R

L

= 6.7 Ω

I

D

≅ - 1.5 A, V

GEN

= - 4.5 V, R

g

= 1 Ω

20 40

ns

Rise Time

t

r

25 50

Turn-Off Delay Time

t

d(off)

50 100

Fall Time

t

f

30 60

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 10 V, R

L

= 6.7 Ω

I

D

≅ - 1.5 A, V

GEN

= - 10 V, R

g

= 1 Ω

715

Rise Time

t

r

10 20

Turn-Off Delay Time

t

d(off)

55 110

Fall Time

t

f

30 60

Document Number: 65906

S10-0543-Rev. A, 08-Mar-10

www.vishay.com

3

Vishay Siliconix

Si8499DB

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 10.8

A

Pulse Diode Forward Current

I

SM

- 20

Body Diode Voltage

V

SD

I

S

= - 1.5 A, V

GS

= 0 V

- 0.8 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 1.5 A, dI/dt = 100 A/µs, T

J

= 25 °C

40 80 ns

Body Diode Reverse Recovery Charge

Q

rr

22 45 nC

Reverse Recovery Fall Time

t

a

15

ns

Reverse Recovery Rise Time

t

b

25

SI8499DB-T2-E1

SI8499DB-T2-E1

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