OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI8499DB-T2-E1

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
Vishay Siliconix
Si8499DB
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=5Vthru2.5V
V
GS
=1.5V
V
GS
=2V
V
GS
=1V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.05
0.10
0.15
0.20
0 5 10 15 20
V
GS
=2V
V
GS
=4.5V
V
GS
=1.8V
V
GS
=2.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 5 10 15 20 25 30
I
D
=1.5A
V
DS
=10V
V
DS
=5V
V
DS
=16V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
T
C
= 25 °C
T
C
=125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
400
800
1200
1600
2000
048121620
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
=1.8V;I
D
=0.5A
V
GS
=2V;
V
GS
=4.5V;I
D
=1A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
I
D
=1A
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
5
Vishay Siliconix
Si8499DB
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.4
0.5
0.6
0.7
0.8
0.9
1.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0.12
012345
T
J
=25 °C
I
D
= - 1.5 A
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
Power (W)
Pulse (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)
*
BVDSS Limited
1ms
100 μs
10 ms
1s,10s
100 ms
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specied
- Drain Current (A)
I
D
DC
www.vishay.com
6
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
Vishay Siliconix
Si8499DB
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4
8
12
16
20
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0
3
6
9
12
15
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
P1-P3P4-P6P7-P9

SI8499DB-T2-E1

Mfr. #:
Buy SI8499DB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet