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MMRF1023HSR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
MMRF1023HS
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 66 W asymmetrical Doherty RF power LDMOS transistor is optimized for
instantaneous signal bandwidth capabilities covering the frequency range of
2300 to 2400 MHz. This part is ideally suited for commercial and defense
communications and electronic warfare applications, such as an IED jammer.
2300 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQA
= 750 mA, V
GSB
=0.7Vdc,P
out
= 66 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
G
ps
(dB)
η
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz 14.9 46.7 7.8 –34.0
2350 MHz 15.1 46.5 7.8 –35.6
2400 MHz 15.1 46.4 7.5 –34.6
Features
• Advanced high performance in--package Doherty
• Greater negative gate--source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems
Document Number: MMRF1023HS
Rev. 0, 4/2016
Freescale Semiconductor
Technical Data
2300–2400 MHz, 66 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
MMRF1023HS
Figure 1. Pin Connections
(Top View)
RF
outA
/V
DSA
RF
outB
/V
DSB
RF
inA
/V
GSA
RF
inB
/V
GSB
VBW
A
(1)
VBW
B
(1)
6
3
15
24
Carrier
Peaking
NI--1230S--4L2L
1. Device cannot operate with the V
DD
current
supplied through pin 3 and pin 6.
© Freescale Semiconductor, Inc., 2016. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1023HS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 °C
Case Operating Temperature Range T
C
–40 to +150 °C
Operating Junction Temperature Range
(1)
T
J
–40 to +225 °C
CW Operation @ T
C
=25°C
Derate above 25°C
CW 248
1.2
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 72°C, 66 W Avg., W -- CDMA, 28 Vdc, I
DQA
= 750 mA,
V
GSB
= 0.7 Vdc, 2350 MHz
R
θ
JC
0.25 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 1200 V
Table 4. Electrical Characteristics (T
A
=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
(3)
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=32Vdc,V
GS
=0Vdc)
I
DSS
— — 1 μAdc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 μAdc
On Characteristics -- Side A (Carrier)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 160 μAdc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
DA
= 750 mAdc, Measured in Functional Test)
V
GS(Q)
1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.6Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
On Characteristics -- Side B (Peaking)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 240 μAdc)
V
GS(th)
0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=2.4Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
3. Each side of device measured separately.
(continued)
MMRF1023HS
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
=25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests
(1,2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 750 mA, V
GSB
=0.7Vdc,P
out
=66WAvg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5MHzOffset.
Power Gain
G
ps
14.0 14.9 17.0 dB
Drain Efficiency η
D
43.0 46.7 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.2 7.8 — dB
Adjacent Channel Power Ratio ACPR — –34.0 –31.0 dBc
Load Mismatch
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) I
DQA
= 750 mA, V
GSB
= 0.7 Vdc, f = 2350 MHz, 100 μsec(on),
10% Duty Cycle
VSWR 5:1 at 32 Vdc, 417 W Pulsed CW Output Power
(3 dB Input Overdrive from 324 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance
(2)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQA
= 750 mA, V
GSB
=0.7Vdc,
2300–2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 275 — W
P
out
@ 3 dB Compression Point
(3)
P3dB — 410 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2300–2400 MHz frequency range)
Φ — –12.3 — °
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 90 — MHz
Gain Flatness in 100 MHz Bandwidth @ P
out
=66WAvg. G
F
— 0.3 — dB
Gain Variation over Temperature
(–30°Cto+85°C)
∆G — 0.008 — dB/°C
Output Power Variation over Temperature
(–30°Cto+85°C)
∆P1dB — 0.008 — dB/°C
Table 5. Ordering Information
Device Tape and Reel Information Package
MMRF1023HSR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--1230S--4L2L
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
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MMRF1023HSR5

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Buy MMRF1023HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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