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MMRF1023HSR5

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1023HS
Figure 2. MMRF1023HS Test Circuit Component Layout
*C3, C4, C5, C6, C14 and C15 are mounted vertically.
CUT OUT AREA
V
DDA
V
GGA
V
DDB
V
GGB
C1
C2
R2
C3*
C4*
C5*
C6*
R1
Z1
C7
C8
R3
C10
C12
C11
C9
C14*
C15*
C13
C16
C17
C18
C19
C
P
Table 6. MMRF1023HS Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C8, C10, C12, C16, C18 10 μF Chip Capacitors C5750X7S2A106M230KB TDK
C2, C4, C5, C7, C11, C17 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C3 0.7 pF Chip Capacitor ATC100B0R7CT500XT ATC
C6 0.8 pF Chip Capacitor ATC100B0R8CT500XT ATC
C9, C19 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26 Multicomp
C13 0.6 pF Chip Capacitor ATC00F0R6BT250XT ATC
C14 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C15 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC
R1 50 Ω, 10 W Termination CW12010T0050GBK ATC
R2, R3 3.0 Ω, 1/4 W Chip Resistors CRCW12063R0FKEA Vishay
Z1 2300–2700 MHz Band, 90°, 2 dB Hybrid Coupler X3C25P1-02S Anaren
PCB Rogers RO4350B, 0.020″, ε
r
=3.66 — MTL
MMRF1023HS
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2300–2400 MHz
PARC (dB)
–2.4
–1.6
–1.8
–2
–2.2
–2.6
2290
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 66 Watts Avg.
14.6
15.6
15.5
15.4
–37
48.5
48
47.5
47
–32
–33
–34
–35
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15.3
15.2
15.1
15
14.9
14.8
14.7
2305 2320 2335 2350 2365 2380 2395 2410
46.5
–36
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–90
0
–15
–30
–60
1 300
IMD, INTERMODULATION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
–1
–3
35
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
15 55 75 115
25
55
50
45
40
35
30
η
D
, DRAIN EFFICIENCY (%)
95
η
D
ACPR
PARC
ACPR (dBc)
–42
–30
–32
–34
–38
–36
–40
15.6
G
ps
, POWER GAIN (dB)
15.4
15.2
15
14.8
14.6
14.4
G
ps
–5
1
ACPR
η
D
PARC
G
ps
V
DD
=28Vdc,P
out
=66W(Avg.),I
DQA
= 750 mA, V
GSB
=0.7Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
V
DD
=28Vdc,P
out
= 24 W (PEP), I
DQA
= 750 mA
V
GSB
= 0.7 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
IM3--L
IM5--U
IM7--L
IM7--U
100
–1 dB = 48.25 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
–2 dB = 65.3 W
–3 dB = 84.8 W
IM5--L
IM3--U
–75
V
DD
=28Vdc,I
DQA
= 750 mA, V
GSB
=0.7Vdc
f = 2350 MHz, Single--Carrier W--CDMA
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1023HS
TYPICAL CHARACTERISTICS — 2300–2400 MHz
1
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
11
17
0
60
50
40
30
20
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
16
15
10 400
10
–60
ACPR (dBc)
14
13
12
0
–30
–40
–50
Figure 7. Broadband Frequency Response
3
21
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQA
= 750 mA
V
GSB
=0.7Vdc
15
12
9
GAIN (dB)
18
6
2000 2100 2200 2300 2400 2500 2600 2700 2800
Gain
ACPR
η
D
2300 MHz
G
ps
2400 MHz
2350 MHz
2300 MHz
2350 MHz
2400 MHz
2300 MHz
2350 MHz
2400 MHz
V
DD
=28Vdc,I
DQA
= 750 mA, V
GSB
=0.7Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
100
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MMRF1023HSR5

Mfr. #:
Buy MMRF1023HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 66 W Avg., 28 V
Lifecycle:
New from this manufacturer.
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