IXYX100N120B3 Datasheet IXYX100N120B3 | P1-P3

IXYK100N120B3

IXYX100N120B3

V

CES

= 1200V

I

C110

= 100A

V

CE(sat)

≤ ≤

≤

2.6V

t

fi(typ)

= 240ns

DS100519A(03/13)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 μA

T

J

= 150°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15V, Note 1 2.20 2.60 V

T

J

= 150°C 2.76 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1200 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1MΩ 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 225 A

I

LRMS

Terminal Current Limit 160 A

I

C110

T

C

= 110°C 100 A

I

CM

T

C

= 25°C, 1ms 530 A

I

A

T

C

= 25°C 50 A

E

AS

T

C

= 25°C 1.2 J

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 1Ω I

CM

= 200 A

(RBSOA) Clamped Inductive Load @V

CE

≤ V

CES

P

C

T

C

= 25°C 1150 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

1200V XPT

TM

IGBTs

GenX3

TM

G = Gate E = Emitter

C = Collector Tab = Collector

TO-264 (IXYK)

E

G

C

PLUS247 (IXYX)

G

Tab

E

C

G

Extreme Light Punch Through

IGBT for 5-30 kHz Switching

Features

z

Optimized for 5-30kHZ Switching

z

Square RBSOA

z

Positive Thermal Coefficient of

Vce(sat)

z

Avalanche Rated

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYK100N120B3

IXYX100N120B3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 30 52 S

C

ie

s

6000 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 367 pF

C

res

127 pF

Q

g(on)

250 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 0.5 • V

CES

42 nC

Q

gc

96 nC

t

d(on)

30 ns

t

ri

90 ns

E

on

7.7 mJ

t

d(off)

153 ns

t

fi

240 ns

E

of

f

7.1 11.5 mJ

t

d(on)

29 ns

t

ri

96 ns

E

on

11.4 mJ

t

d(off)

190 ns

t

fi

260 ns

E

off

10.1 mJ

R

thJC

0.13 °C/W

R

thCS

0.15 °C/W

Inductive load, T

J

= 25°C

I

C

= I

C110

, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1Ω

Note 2

Inductive load, T

J

= 150°C

I

C

= I

C110

, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1Ω

Note 2

TO-264 Outline

Terminals: 1 = Gate

2,4 = Collector

3 = Emitter

Terminals: 1 - Gate

2 - Collector

3 - Emitter

PLUS247

TM

Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXYK100N120B3

IXYX100N120B3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

200

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

7V

9V

6V

8V

10V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 2 4 6 8 10 12 14 16 18 20

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

12V

10V

8V

11V

9V

7V

6V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

20

40

60

80

100

120

140

160

180

200

012345

V

CE

- Volts

I

C

- Amperes

8V

7V

6V

9V

V

GE

= 15V

13V

12V

11V

10V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 100A

I

C

= 50A

I

C

= 200A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 200

A

T

J

= 25ºC

100

A

50

A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

200

3.54.55.56.57.58.59.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYX100N120B3

IXYX100N120B3

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