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IXYX100N120B3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N120B3
IXYX100N120B3
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Maximum Transient Thermal Impedance
aaaaaa
0.3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 1
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220 240 260
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 100A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXYK100N120B3
IXYX100N120B3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6
7
8
9
10
11
12
13
12345678910
R
G
- Ohms
E
off
- MilliJoules
4
6
8
10
12
14
16
18
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
0
100
200
300
400
500
600
700
800
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R
G
- Ohms
t
f i
- Nanoseconds
150
200
250
300
350
400
450
500
550
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4
5
6
7
8
9
10
11
12
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4
5
6
7
8
9
10
11
12
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200
250
300
350
400
450
500
550
600
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
130
150
170
190
210
230
250
270
290
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
100
200
300
400
500
600
700
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
140
180
220
260
300
340
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK100N120B3
IXYX100N120B3
IXYS REF: IXY_100N120B3(9T)12-13-12
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
140
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
22
24
26
28
30
32
34
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC, 25ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
24
25
26
27
28
29
30
31
32
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
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R
G
- Ohms
t
r i
- Nanoseconds
20
25
30
35
40
45
50
55
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
P1-P3P4-P6

IXYX100N120B3

Mfr. #:
Buy IXYX100N120B3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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