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PRMD13Z

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Nexperia
PRMD13
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD13 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 25 July 2017 4 / 16
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 385 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 261 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
Nexperia
PRMD13
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD13 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 25 July 2017 5 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor, for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current (emitter open)
V
CB
= 50 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 30 V; I
B
= 0 A; T
amb
= 25 °C - - 1 µAI
CEO
collector-emitter cut-off
current (base open)
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current (collector open)
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 170 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 10 mA; T
amb
= 25 °C 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA; T
amb
= 25 °C - - 100 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100 µA; T
amb
= 25 °C - 0.6 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA; T
amb
= 25 °C 1.3 0.9 - V
R1 bias resistor 1 [1] 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio
T
amb
= 25 °C
[1] 8 10 12
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 2.5 pFC
C
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 3 pF
V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 230 - MHzf
T
transition frequency
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 180 - MHz
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Nexperia
PRMD13
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)
PRMD13 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 25 July 2017 6 / 16
I
C
(mA)
10
-1
10
2
101
006aac819
10
2
10
10
3
h
FE
1
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 3. NPN transistor: DC current gain as a function
of collector current; typical values
V
CE
(V)
0 542 31
aaa-018581
0.04
0.06
0.02
0.08
0.1
I
C
(A)
0
I
B
= 0.07 mA
0.14 mA
0.21 mA
0.28 mA
0.35 mA
0.42 mA
0.70 mA
0.49 mA
0.63 mA
0.56 mA
T
amb
= 25 °C
Fig. 4. NPN transistor: Collector current as a function
of collector-emitter voltage; typical values
aaa-018585
I
C
(mA)
10
-1
10
2
101
10
-1
1
V
CEsat
(V)
10
-2
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 5. NPN transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aac821
I
C
(mA)
10
-1
10
2
101
1
10
V
I(on)
(V)
10
-1
(1)
(2)
(3)
V
CE
= 0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. NPN transistor: On-state input voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PRMD13Z

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Nexperia
Description:
Bipolar Transistors - BJT PRMD13/SOT1268 DFN1412-6
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