GUO40-12NO1
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.06
R 4.3 K/W
R
min.
40
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
90
P
tot
35 WT = 25°C
C
R K/W
10
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.28
T = 25°C
VJ
150
V
F0
V0.74T = °C
VJ
175
r
F
16.3
mΩ
V0.92T = °C
VJ
I = A
F
V
10
1.23
I = A
F
30
I = A
F
30
threshold voltage
slope resistance
for power loss calculation only
µA
150
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
10
unction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
370
400
495
480
A
A
A
A
315
340
685
665
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.50
IXYS reserves the right to change limits, conditions and dimensions.
20131108cData according to IEC 60747and per semiconductor unless otherwise specified
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