GUO40-12NO1

GUO40-12NO1
_
~
~
~
+
S2
Y2
Y1
X1
X2
A2
C
A3
A4
A5
A6
A
E
F
4x e
e
Z2
Z1
5x b
5x b2
L1
+1
+2
S1
Q
DL
R
Ø
P
O
min typ. max min typ. max
A 5.40 5.50 5.60 0.213 0.217 0.221
A2 3.90 4.00 4.10 0.154 0.158 0.162
A3 0.95 1.00 1.10 0.037 0.039 0.043
A4 0.95 1.00 1.05 0.037 0.039 0.041
A5 1.60 1.70 1.80 0.063 0.067 0.071
A6 1.25 1.30 1.35 0.049 0.051 0.053
b 0.95 1.00 1.05 0.037 0.039 0.041
b2 1.95 2.00 2.05 0.077 0.079 0.081
C 0.45 0.50 0.55 0.018 0.020 0.022
D 24.80 25.00 25.20 0.977 0.985 0.993
E 34.70 35.00 35.30 1.367 1.379 1.391
e BSC 7.50 BSC 0.296
F 2.40 2.50 2.60 0.095 0.099 0.102
L 20.30 20.40 20.50 0.800 0.804 0.808
L1 3.70 3.75 3.80 0.146 0.148 0.150
O 17.40 17.50 17.60 0.686 0.690 0.693
Ø P 4.10 4.20 4.30 0.162 0.165 0.169
Q 9.20 9.30 9.40 0.362 0.366 0.370
Ø
/
2
R
1.77 0.070
s1 3.45 3.50 3.55 0.136 0.138 0.140
s2 1.45 1.50 1.55 0.057 0.059 0.061
t1 0.95 1.00 1.05 0.037 0.039 0.041
t2 0.95 1.00 1.05 0.037 0.039 0.041
x1 3.20 3.30 3.40 0.126 0.130 0.134
x2 1.90 2.00 2.10
0.075 0.079 0.083
y1 1.60 1.65 1.70 0.063 0.065 0.067
y2 4.65 4.70 4.75 0.183 0.185 0.187
z1 2.80 2.90 3.00
0.110 0.114 0.118
Dim.
Millimeter Inches
-
~ +~ ~
Outlines GUFP
IXYS reserves the right to change limits, conditions and dimensions.
20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
GUO40-12NO1
011
0
200
400
600
800
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
20
40
60
10
-3
10
-2
10
-1
10
0
150
200
250
300
1 10 100 1000 10000
0
1
2
3
4
5
0 2550751001251501750481216
0
4
8
12
16
20
0 25 50 75 100 125 150 175
0
10
20
30
40
I
FSM
[A]
t[s]
t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.302 0.002
2 1.252 0.032
3 1.582 0.227
4 1.164 0.820
0.8 x V
RRM
50 Hz
T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=25°C
T
VJ
=150°C
T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved

GUO40-12NO1

Mfr. #:
Manufacturer:
Littelfuse
Description:
Bridge Rectifiers 40 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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