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FGB30N6S2

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49367.
Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . .90ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . . 23nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Device Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
BV
CES
Collector to Emitter Breakdown Voltage 600 V
I
C25
Collector Current Continuous, T
C
= 25°C 45 A
I
C110
Collector Current Continuous, T
C
= 110°C 20 A
I
CM
Collector Current Pulsed (Note 1) 108 A
V
GES
Gate to Emitter Voltage Continuous ±20 V
V
GEM
Gate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at T
J
= 150°C, Figure 2 60A at 600V
E
AS
Pulsed Avalanche Energy, I
CE
= 20A, L = 1.3mH, V
DD
= 50V 150 mJ
P
D
Power Dissipation Total T
C
= 25°C 167 W
Power Dissipation Derating T
C
> 25°C 1.33 W/°C
T
J
Operating Junction Temperature Range -55 to 150 °C
T
STG
Storage Junction Temperature Range -55 to 150 °C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Package
Symbol
C
E
G
TO-247 E
C
G
TO-263AB
TO-220AB
E
C
G
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)
©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
30N6S2 FGH30N6S2 TO-247 Tube N/A 30 Units
30N6S2 FGP30N6S2 TO-220AB Tube N/A 50 Units
30N6S2 FGB30N6S2 TO-263AB Tube N/A 50 Units
30N6S2 FGB30N6S2T TO-263AB 330mm 24mm 800 Units
Symbol Parameter Test Conditions Min Typ Max Units
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250µA, V
GE
= 0 600 - - V
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -10mA, V
GE
= 0 20 - - V
I
CES
Collector to Emitter Leakage Current V
CE
= 600V T
J
= 25°C - - 100 µA
T
J
= 125°C- - 2 mA
I
GES
Gate to Emitter Leakage Current V
GE
= ± 20V - - ±250 nA
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 12A,
V
GE
= 15V
T
J
= 25°C-2.02.5V
T
J
= 125°C- 1.72.0 V
Q
G(ON)
Gate Charge I
C
= 12A,
V
CE
= 300V
V
GE
= 15V - 23 29 nC
V
GE
= 20V - 26 33 nC
V
GE(TH)
Gate to Emitter Threshold Voltage I
C
= 250µA, V
CE
= 600V 3.5 4.3 5.0 V
V
GEP
Gate to Emitter Plateau Voltage I
C
= 12A, V
CE
= 300V - 6.5 8.0 V
SSOA Switching SOA
T
J
= 150°C, R
G
= 10Ω, V
GE
=
15V, L = 100µH, V
CE
= 600V
60 - - A
t
d(ON)I
Current Turn-On Delay Time IGBT and Diode at T
J
= 25°C,
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10Ω
L = 200µH
Test Circuit - Figure 20
-6-ns
t
rI
Current Rise Time - 10 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 40 - ns
t
fI
Current Fall Time - 53 - ns
E
ON1
Turn-On Energy (Note 2) - 55 - µJ
E
ON2
Turn-On Energy (Note 2) - 110 - µJ
E
OFF
Turn-Off Energy (Note 3) - 100 150 µJ
t
d(ON)I
Current Turn-On Delay Time IGBT and Diode at T
J
= 125°C
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10Ω
L = 200µH
Test Circuit - Figure 20
-11-ns
t
rI
Current Rise Time - 17 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 73 100 ns
t
fI
Current Fall Time - 90 100 ns
E
ON1
Turn-On Energy (Note 2) - 55 - µJ
E
ON2
Turn-On Energy (Note 2) - 160 200 µJ
E
OFF
Turn-Off Energy (Note 3) - 250 350 µJ
R
θJC
Thermal Resistance Junction-Case - - 0.75 °C/W
NOTE:
2.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 20.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
10
0
20
25 75 100 125 150
40
30
50
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
40
60
20
70
50
30
10
T
J
= 150
o
C, R
G
= 10
Ω
, V
GE
= 15V, L = 100
µ
H
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
30
10
20
1000
100
T
C
75
o
C
T
J
= 125
o
C, R
G
= 3
Ω
, L = 200
µ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 0.49
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
V
GE
= 10V V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (
µ
s)
100
150
200
250
300
350
9 10111213141516
2
4
6
8
10
12
V
CE
= 390V, R
G
= 10
Ω
, T
J
= 125
o
C
I
SC
t
SC
0.50 1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
2
6
1.50 2.25
14
8
18
16
1.25
4
10
12
1.75
PULSE DURATION = 250
µ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 125
o
C
T
J
= 150
o
C
0.75
2.00
T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
18
.5 1 1.50 2.0 2.25.75 1.751.25
2
6
14
8
16
4
10
12
T
J
= 125
o
C
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
=15V
PULSE DURATION = 250
µ
s
T
J
= 150
o
C
P1-P3P4-P6P7-P8

FGB30N6S2

Mfr. #:
Buy FGB30N6S2
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 45A 167W TO263AB
Lifecycle:
New from this manufacturer.
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