©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
79 16
75
150
5
125
100
175
6 8 10 11 12 13 14 15
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= -55
o
C
T
J
= 125
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
2 6 10 120
14
16
14 16 18 2448 20
I
G(REF)
= 1mA, R
L
= 25Ω, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
22
I
CE
= 6A
0
0.6
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
0.8
12525
1.2
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
1.0
I
CE
= 24A
I
CE
= 12A
0.4
0.2
R
G
= 10Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
150
0.1
10 100
R
G
, GATE RESISTANCE (
Ω
)
1.0 1000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
10
1
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 1020304050
0.0
0.4
1.2
1.4
0.8
C
OES
C
IES
60 70 80 90 100
0.2
0.6
1.0
FREQUENCY = 1MHz
1.5
2.0
2.5
3.0
3.5
6 7 8 9 10 11 12 13 14 15 16
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 12A
I
CE
= 6A
I
CE
= 24A
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
