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IDD03E60BUMA1

P1-P3P4-P6P7-P8
2007-04-24Rev.2.2
Page 1
IDD03E60
Fast Switching EmCon
Diode
Product Summary
V
RRM
600 V
I
F
3 A
V
F
1.5 V
T
j
max
175 °C
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
Pin 1 PIN 2,4 PIN 3
NC C A
Marking
D03E60
Type Package Ordering Code
IDD03E60 PG-TO252-3-1
-
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage V
RRM
600 V
Continous forward current
T
C
=25°C
T
C
=90°C
I
F
7.3
4.9
A
Surge non repetitive forward current
T
C
=25°C, t
p
=10 ms, sine halfwave
I
FSM
16
Maximum repetitive forward current
T
C
=25°C, t
p
limited by T
jmax
, D=0.5
I
FRM
11
Power dissipation
T
C
=25°C
T
C
=90°C
P
tot
23
13.1
W
Operating and storage temperature T
j
,
T
st
g
-55...+175 °C
Soldering temperature
reflow soldering, MSL3
T
S
260 °C
2007-04-24Rev.2.2
Page 2
IDD03E60
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
thJC
- - 6.5 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25°C
V
R
=600V, T
j
=150°C
I
R
-
-
-
-
50
250
µA
Forward voltage drop
I
F
=3A, T
j
=25°C
I
F
=3A, T
j
=150°C
V
F
-
-
1.5
1.5
2
-
V
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2007-04-24Rev.2.2
Page 3
IDD03E60
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=25°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=125°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=150°C
t
rr
-
-
-
62
98
103
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
= 3 A, di
F
/dt=350A/µs, T
j
=25°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=125°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=150°C
I
rrm
-
-
-
3.8
4.6
4.7
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=25°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=125°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=150°C
Q
rr
-
-
-
118
195
215
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=25°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=125°C
V
R
=400V, I
F
=3A, di
F
/dt=350A/µs, T
j
=150°C
S
-
-
-
4.1
5.1
5.2
-
-
-
P1-P3P4-P6P7-P8

IDD03E60BUMA1

Mfr. #:
Buy IDD03E60BUMA1
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 7.3A TO252-3
Lifecycle:
New from this manufacturer.
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