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IDD03E60BUMA1

P1-P3P4-P6P7-P8
2007-04-24Rev.2.2
Page 4
IDD03E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
≤ 175°C
25 50 75 100 125
°C
175
T
C
0
1
2
3
4
5
6
A
8
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: T
j
≤ 175°C
25 50 75 100 125
°C
175
T
C
0
2
4
6
8
10
12
14
16
18
20
W
24
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0 0.5 1 1.5
V
2.5
V
F
0
1
2
3
4
5
6
7
A
9
I
F
-55°C
25°C
100°C
150°C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60 -20 20 60 100
°C
160
T
j
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
2
V
F
1,5A
3A
6A
2007-04-24Rev.2.2
Page 5
IDD03E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
0
20
40
60
80
100
120
140
160
180
ns
220
t
rr
6A
3A
1.5A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125 °C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
100
120
140
160
180
200
220
240
260
nC
300
Q
rr
3A
6A
1.5A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
A
8
I
rr
6A
3A
1.5A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
0
1
2
3
4
5
6
7
9
S
6A
3A
1.5A
2007-04-24Rev.2.2
Page 6
IDD03E60
9 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDD03E60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
P1-P3P4-P6P7-P8

IDD03E60BUMA1

Mfr. #:
Buy IDD03E60BUMA1
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 7.3A TO252-3
Lifecycle:
New from this manufacturer.
Delivery:
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