© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 3
1 Publication Order Number:
NVTFS4C10N/D
NVTFS4C10N
Power MOSFET
30 V, 7.4 mW, 47 A, Single N−Channel,
m8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C10NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Notes 1, 2, 4)
Steady
State
T
A
= 25°C
I
D
15.3
A
T
A
= 100°C 10.8
Power Dissipation R
q
JA
(Notes 1, 2, 4)
T
A
= 25°C
P
D
3.0
W
T
A
= 100°C 1.5
Continuous Drain
Current R
y
JC
(Notes 1, 3, 4)
T
C
= 25°C
I
D
47
A
T
C
= 100°C 33
Power Dissipation
R
y
JC
(Notes 1, 3, 4)
T
C
= 25°C
P
D
28 W
T
C
= 100°C 14 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
196 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
53 A
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
GS
= 10 V, I
L
= 10.2 A, L = 0.5 mH)
E
AS
26 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) (Notes 1, 3)
R
y
JC
5.4
°C/W
Junction−to−Ambient – Steady State
(Notes 1, 2)
R
q
JA
50
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Surface−mounted on FR4 board using 650 mm
2
, 2 oz. Cu Pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
www.onsemi.com
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
30 V
7.4 mW @ 10 V
47 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
11 mW @ 4.5 V
(Note: Microdot may be in either location)
1
1
XXXX
AYWWG
G
D
D
D
D
S
S
S
G
See detailed ordering and shipping information on page 5 o
this data sheet.
ORDERING INFORMATION
4C10 = Specific Device Code for
NVMTS4C10N
WF10 = Specific Device Code of
NVTFS4C10NWF
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
