NVTFS4C10NWFTAG

NVTFS4C10N
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4
TYPICAL CHARACTERISTICS
Q
gs
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
25201510 3050
0
400
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.1
1
10
100
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
Q
T
Q
gd
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
R
DS(on)
Limit
Thermal Limit
Package Limit
10 ms
1 ms
dc
1000
200
600
800
1200
1.0
0
2
4
6
8
10
0 4 6 8 12 14 16 18 20
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
14
16
18
20
102
V
GS
= 10 V
T
C
= 25°C
0.1 ms
0.01 ms
NVTFS4C10N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 12. Thermal Response
Figure 13. G
FS
vs. I
D
I
D
(A)
4030100
0
10
50
G
FS
(S)
20 50
20
60 80
30
40
60
70
Figure 14. Avalanche Characteristics
T
AV
, TIME IN AVALANCHE (s)
0.0010.000010.000001
1
10
100
I
PEAK
, DRAIN CURRENT (A)
0.0001
T
J(initial)
= 25°C
T
J(initial)
= 85°C
t, PULSE TIME (s)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
TRANSIENT THERMAL RESISTANCE (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
R
q
JA
Single Pulse
R
y
JC
Single Pulse
y
JC
, Infinite Heat Sink Assumption
q
JA
, 650 mm
2
, 2 oz Cu Pad, Single
Layer on FR4
ORDERING INFORMATION
Device Package Shipping
NVTFS4C10NTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C10NWFTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVTFS4C10N
www.onsemi.com
6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M 1.40 1.50
q 0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
B
A
0.20
C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75
2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40
0.009 0.012 0.016
E3
4X
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NVTFS4C10NWFTAG

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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET U8FL 30V 47A 7.4MOHM
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