IRF7509PbF
PD - 95397
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
HEXFET
®
Power MOSFET
N- Ch P-Ch
V
DSS
3 0 V -30V
R
DS(on)
0.11Ω 0.20Ω
6/15/04
Micro8
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Description
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
N-CHANNEL MOSFET
P-CHANNEL MOSFET
www.irf.com 1
Parameter Max. Units
N-Channel P-Channel
V
DS
Drain-Source Voltage 30 -30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
2.7 -2.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
2.1 -1.6 A
I
DM
Pulsed Drain Current 21 -16
P
D
@T
A
= 25°C Maximum Power Dissipation 1.25 W
P
D
@T
A
= 70°C Maximum Power Dissipation 0.8 W
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10µS 30 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 100 °C/W
Absolute Maximum Ratings
